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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increased wiring resistance and increased wiring delay, and achieve the effect of easy connection

Inactive Publication Date: 2012-10-17
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When arranging a plurality of highly integrated semiconductor devices in a horizontal plane and connecting these semiconductor devices with wiring to form a product, the length of the wiring increases, which may increase the resistance of the wiring and increase the wiring delay.

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Embodiment Construction

[0056] (Summary of the manufacturing method of the embodiment)

[0057] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Figure 1A ~ Figure 1H is a sectional view showing a cross section of a semiconductor device in each step of the manufacturing method of the embodiment, figure 2 It is a flowchart showing each of these steps. In the manufacturing method of the embodiment, there are steps of forming via holes, cutting out chips, picking up chips, stacking chips, and firing chips.

[0058][Formation of via holes]

[0059] First, a wafer 1 is prepared, which is formed by forming a via hole on the device wafer 10 and filling the via hole with a porous metal material 54 (step 100. Hereinafter referred to as "S100") .).

[0060] Such as Figure 1A As shown, electrode pads 20 for constituting circuits are formed on one main surface of the device wafer 10 , and recesses (or through holes) corresponding to the position...

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Abstract

Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device. Background technique [0002] In recent years, high integration of semiconductor devices has been advanced. When arranging a plurality of highly integrated semiconductor devices in a horizontal plane and connecting these semiconductor devices with wires to form a product, the length of the wires increases, which may increase the resistance of the wires and increase the delay of the wires. [0003] Therefore, a method using a three-dimensional integration technique in which semiconductor devices are three-dimensionally stacked has been proposed. In this three-dimensional integration technology, a method has been proposed in which a substrate on which an integrated circuit is formed in advance is divided into chips, and chips confirmed as good products by a good product discrimination test performed before the separation are selected, and stacked on On other substrates, ...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L2224/13009H01L2224/05573H01L2224/13082H01L2224/05639H01L2224/13339H01L21/76898H01L2224/05624H01L2224/81986H01L2224/13076H01L2224/0557H01L2224/13144H01L2225/06541H01L2924/01029H01L2224/13147H01L2224/0401H01L2224/8184H01L2224/13124H01L2224/13294H01L24/11H01L2224/94H01L2224/11505H01L25/50H01L2224/05644H01L24/81H01L2224/0346H01L2224/13155H01L2224/05551H01L24/13H01L25/0657H01L2224/13139H01L2224/11002H01L2224/05647H01L2225/06513H01L23/481H01L2224/05655H01L2224/11332H01L2225/06565H01L2924/00014H01L2924/12042H01L2224/03H01L2224/11H01L2224/05552H01L2924/00H01L23/12H01L23/48
Inventor 中尾贤原田宗生饭田到山口永司
Owner TOKYO ELECTRON LTD
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