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A detector pixel signal readout circuit and an imaging method thereof

A technology for reading out circuits and image signals, used in image communication, television, electrical components, etc., and can solve problems such as limited application, expensive and complex systems

Active Publication Date: 2012-10-17
半导体器件有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes such systems generally more expensive and complex, limiting their application in the field

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  • A detector pixel signal readout circuit and an imaging method thereof
  • A detector pixel signal readout circuit and an imaging method thereof
  • A detector pixel signal readout circuit and an imaging method thereof

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Embodiment Construction

[0058] The present invention provides pixel readout circuitry integrated in an imaging pixel array, where the readout circuitry can implement (i.e., by processing the same frame of data) specific modes simultaneously or nearly The characteristics of the input signal to the readout circuit, or may depend on the characteristics of the output signal desired by the readout circuit.

[0059] see Figure 1A , illustrating the integration of the pixel readout circuit 100 in any type of active matrix photodetector (diode array). For example, active matrix photodetectors are available in different types of InSb FPAs in 320x256, 480x384 and 640x512 element formats with pitches ranging from 15-30µm. The diode array may be InSb diodes produced in the process described in [1] (planar technology). To enable various functions of the ROIC, the pixel circuit of the present invention includes a set of switches, capacitors, amplifiers and memories. By controlling the switches and the bias lev...

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Abstract

A pixel readout circuit for use with an imaging pixel array, said pixel readout circuit comprising: an input channel for receiving an image signal corresponding to electrical output of a photosensitive element of the pixel; and an electronic circuit interconnected between said input channel and an output readout utility. The electronic circuit comprises a capacitive unit, and a single analyzer. The capacitive unit is controllably linked to said input channel for accumulating a charge corresponding to received intensity generated by said pixel during a single frame period, and is connected to said output readout utility for transmitting image data thereto. The signal analyzer unit is controllably linked to said input channel for receiving and analyzing at least a part of said image signal, and is connected to said output readout utility, and is configured and operable for analyzing said at least a part of said image signal by determining an amount of accumulated charge corresponding to said received intensity, and upon detecting that said amount of the accumulated charge satisfies a predetermined condition generating data indicative of a detected event and transmitting said data to said output readout utility.

Description

technical field [0001] The invention relates to the field of detector pixel signal readout and processing. [0002] quote [0003] The following references are considered relevant for understanding the background of the invention: [0004] 1: I.O.Nesher and P.Klipstein, "High performance IR detectors at SCD present and future", SPIE Annual Report, Volume 5957, Infrared Optoelectronics, August 2005, pages 0S1-OS12 Background technique [0005] The photodetector device responds to received photons by creating an electrical effect that can be quantified and thus provide information about the flux of the received photons. A focal plane array (FPA) of detectors is used to obtain an image of the object, so each detector provides a pixel in the image array. In this image, each pixel is provided with a unique address and value, which can be further used to process the image to extract information from the image. [0006] The coordination between imaging parameters is a trade-off...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/378H04N5/335H04N5/33H04N25/42H04N25/00
CPCH04N5/3745H04N5/343H04N5/335H04N25/42H04N25/00H04N25/77F41G7/008F41G7/2253F41G7/226F41G7/2293H04N25/707H04N25/772H04N5/33
Inventor S·埃尔坎E·伊兰R·多布鲁密斯林
Owner 半导体器件有限公司
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