A kind of power semiconductor module and its manufacturing method
A technology of power semiconductors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of high man-hour consumption, troublesome welding, high production costs, etc., and achieve product reliability enhancement, Simplification of manufacturing process and improvement of production efficiency
Active Publication Date: 2016-08-03
浙江世菱半导体有限公司
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, it is very troublesome to weld the two conductive wires with an electric soldering iron, which consumes a lot of man-hours and high production costs. It is also easy to damage the outer insulating layer of the conductive wires during welding, so that short circuits of the conductive wires occur during the process of pouring epoxy resin. Affected
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] Description of drawings: (1, 4, 9) - auxiliary cathode terminal, (2, 5, 8) - gate terminal, (3, 6, 7) - semiconductor chip, (10, 11, 13) - main terminal , 12 insulating shell, 14-bottom plate, 15-installation hole.
[0019] Such as figure 1 , figure 2 with image 3 As shown, a power semiconductor module of the present invention includes a base plate 14, semiconductor chips (3, 6, 7), main terminals (10, 11, 13), gate terminals (2, 5, 8), auxiliary cathode terminals (1, 4, 9) and the insulating shell 12, in the insulating shell 12, perfusion epoxy resin encapsulation is characterized in that: the main terminal (10, 11, 13), the gate terminal (2, 5, 8) and the auxiliary The cathode terminals (1, 4, 9) are all integrated with the insulating shell mold 12, and the main terminals (10, 11, 13), the gate terminals (2, 5, 8) and the auxiliary cathode terminals (1, 4, 9) The inner ends protrude from the body of the insulating casing 12 respectively, and extend to directly c...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a power semiconductor module and a manufacturing method thereof. The module comprises a bottom plate, a semiconductor chip, a main terminal, a gate pole terminal, an auxiliary cathode terminal and an insulation shell, and the insulation shell is filled with epoxy resin in an encapsulating way. The module is characterized in that the main terminal, the gate pole terminal and the auxiliary cathode terminal are integrally molded with the insulation shell; and the internal ends of the main terminal, the gate pole terminal and the auxiliary cathode terminal respectively extend from the insulation shell to be directly connected with the semiconductor chip. According to the module and manufacturing method provided by the invention, the main terminal, the gate pole terminal and the auxiliary cathode terminal are all directly connected with the semiconductor chip in a sintering way, the conductive thread welding is removed, the manufacturing process is simplified, the production efficiency is obviously improved, the cost is reduced and the product reliability is enhanced.
Description
technical field [0001] The invention relates to an electronic component, in particular to a power semiconductor module and a manufacturing method thereof. Background technique [0002] Power semiconductor modules are the main components of modern power electronic equipment. Because of its small size, light weight, compact structure and easy installation, it is widely used at home and abroad. The existing general power semiconductor module includes an insulating shell, a copper base plate, a semiconductor chip and connecting terminals, wherein the connecting terminals include a main terminal, a gate terminal and an auxiliary cathode terminal, the copper base plate is connected to the lower end of the insulating shell, and the semiconductor chip is welded on the copper base plate. The connecting terminal is electrically connected with the semiconductor chip, and the insulating shell is potted with epoxy resin. For the isolation type power semiconductor module, there is also ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/10H01L21/48H01L21/60
Inventor 宗瑞
Owner 浙江世菱半导体有限公司