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Electric-field-enhancement structures including dielectric particles, apparatuses including same, and methods of use

A technology of dielectric particles and electric field enhancement, which can be used in measurement devices, material excitation analysis, instruments, etc., and can solve problems such as difficult spacing or alignment of metal nanoparticles

Inactive Publication Date: 2012-10-31
HEWLETT PACKARD DEV CO LP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it may be difficult to precisely space or align metal nanoparticles

Method used

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  • Electric-field-enhancement structures including dielectric particles, apparatuses including same, and methods of use
  • Electric-field-enhancement structures including dielectric particles, apparatuses including same, and methods of use
  • Electric-field-enhancement structures including dielectric particles, apparatuses including same, and methods of use

Examples

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example 5

[0052] Figure 15 Two adjacent silicon disk structures are shown, where each silicon disk structure has a relatively large diameter silicon disk having a diameter of 2000 nm and a thickness of 200 nm. Each silicon disk structure also includes a relatively small silicon tip protruding from the larger silicon disk, the silicon tip having a diameter of 12.5 nm and a thickness of 200 nm. Figure 15 The dielectric grain structure shown in the Figure 8 The example shown in is the same. The spacing between these two adjacent smaller silicon disks is 30nm. The silicon disc is surrounded by air having a lower refractive index than the silicon disc. The silicon disks were illuminated with excitation EMR having a frequency of 121.197 THz, which was at or close to the resonant frequency of each silicon disk structure. The wave vector that excites the EMR is approximately parallel to Figure 15 Z axis shown in . The polarization direction of the electric field that excites the EMR i...

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Abstract

In one aspect of the present invention, an electric-field-enhancement structure (100) is disclosed. The electric-field-enhancement structure (100) includes a substrate (104) and an ordered arrangement of dielectric particles having at least two adjacent dielectric particles (102, 103) spaced from each othera controll3d distance (S). The controlled distance (S) is selected so that when a resonance mode is excited in each of the at least two adjacent dielectric particles (102, 103) reponsive to excitation electromagnetic radiation, eqch of the 4esonance modes interacts with each other to result in an enhanced electric field between the at least adjacent die; ectric particles (102, 103).; Other aspects of the present invention are electric-field-enhancement apparatuses (1000) that utilize the described electric-field-enhancement structures, and methdos of enhancing an electric field between adjacent dielectric particles.

Description

technical field [0001] Embodiments of the invention relate generally to electric field enhancing structures. More specifically, embodiments of the present invention relate to electric field enhancing structures comprising ordered arrangements of dielectric particles for enhancing incident electric fields between adjacent dielectric particles. Background technique [0002] The enhancement of the electric field around metal particles is a topic of interest in the scientific and technological community today. For example, surface-enhanced Raman spectroscopy ("SERS") is a well-known spectroscopic technique that utilizes specially prepared rough metal surfaces or an enhanced electric field near metal particles to increase the Raman signal from an analyte. In SERS, analytes are adsorbed on or placed adjacent to activated metal surfaces or structures. Irradiating the analyte and the metal surface or metal particle with light of a selected frequency excites surface plasmons in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63G01N21/65
CPCG01N21/658Y10S977/701Y10S977/70Y10S977/723Y10S977/72
Inventor M·西加拉斯R·S·威廉斯D·法塔尔S·王R·博索莱尔
Owner HEWLETT PACKARD DEV CO LP