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Rutile type titanium dioxide nanowire film and preparation method and applications thereof

A technology of titanium dioxide and rutile type, applied in the direction of titanium dioxide, chemical instruments and methods, titanium oxide/hydroxide, etc., to achieve the effect of strong controllability and simple method

Inactive Publication Date: 2012-11-14
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of the invention can solve the problem that it is difficult to directly grow a titanium dioxide film containing sulfate radicals on the FTO conductive glass substrate, and the in-situ hydrothermal method used in the preparation can realize the assembly of the film electrode in one step

Method used

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  • Rutile type titanium dioxide nanowire film and preparation method and applications thereof
  • Rutile type titanium dioxide nanowire film and preparation method and applications thereof
  • Rutile type titanium dioxide nanowire film and preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Using titanyl sulfate as the titanium source precursor, an in-situ hydrothermal method was used to adjust the ratio of concentrated hydrochloric acid and deionized water in the reaction substrate to prepare a rutile-type titanium dioxide nanowire film. The specific steps are as follows:

[0028] (1) Mix 20mL of deionized water, concentrated hydrochloric acid and 2mL cetyltrimethylammonium bromide (CTAB) aqueous solution with a concentration of 1g / L. The concentration of concentrated hydrochloric acid is 36-38%. Concentrated hydrochloric acid and The volume ratio of deionized water is 0:1-10:1. After stirring for 5 minutes, add 0.8 mL of titanyl sulfate aqueous solution with a concentration of 2.88 mol / L and continue stirring for 5 minutes to obtain a mixed solution;

[0029] (2) Put FTO conductive glass in the high-pressure reactor, and the conductive surface leans upward against the inner wall of the reactor;

[0030] (3) Transfer all the mixed solution obtained in ste...

Embodiment 2

[0038] Using titanyl sulfate as the titanium source precursor, the in-situ hydrothermal method was used to adjust the content of surfactant in the reaction substrate to prepare rutile-type titanium dioxide nanowire film. The specific steps are as follows:

[0039](1) Mix 20mL of deionized water, concentrated hydrochloric acid and surfactant (CTAB) aqueous solution. The concentration of CTAB is 1g / L and the volume is 0-5mL. The volume ratio is 3:1, after stirring for 5 minutes, add 0.8 mL of titanyl sulfate aqueous solution with a concentration of 2.88 mol / L and continue stirring for 5 minutes to obtain a mixed solution;

[0040] Steps (2)-(6) are the same as in Example 1 to obtain rutile titanium dioxide nanowire films prepared with different surfactant contents in the reaction substrate.

Embodiment 3

[0042] Using titanyl sulfate as the titanium source precursor, the in-situ hydrothermal method was used to change the content of the titanium source precursor in the reaction substrate to prepare a rutile-type titanium dioxide nanowire film. The specific steps are as follows:

[0043] (1) Take 13mL of deionized water, 5mL of hydrochloric acid (37.5%), and 2mL of a surfactant (CTAB) aqueous solution with a concentration of 1g / L and mix them. After stirring for 5 minutes, add 0-2mL of sulfuric acid with a concentration of 2.88mol / L Titanium oxide aqueous solution and continue stirring for 5 minutes to obtain a mixed solution;

[0044] Steps (2)-(6) are the same as in Example 1 to obtain rutile titanium dioxide nanowire films prepared with different contents of titanium source precursors.

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Abstract

The invention relates to a rutile type titanium dioxide nanowire film and a preparation method and applications thereof. The preparation method of the film comprises the steps of directly growing rutile phase titanium dioxide nanowire array on a conductive glass substrate, and evenly distributing titanium dioxide nanowire clusters on the surface of the top end of the array; and regulating the proportion of various reactants, reaction time, temperature and other factors by taking sulfate radical-containing titanium slat as precursor for preparing the film. The invention further provides applications of the film, and the film can be used as anode materials to assemble a solar cell, or as photocatalyst to carry out water photolysis or organic matter degradation treatment. The method is simple, and has strong controllability, the problems that therutile phase is difficult to be prepared by using the sulfate radical-containing titanium slat and the titanium dioxide nanowire array grows on the conductive substrate in situ are solved, and the change on the diameter and length of the nanowire can be realized while the no change on crystallinity of a sample can be ensured through a calcination method.

Description

Technical field: [0001] The invention relates to a rutile titanium dioxide nanowire film and its preparation method and application. The thin film material is suitable for solar battery anodes, and belongs to the technical field of preparation of special nanostructure titanium dioxide and assembly of solar battery thin film anodes. Background technique: [0002] New environment-friendly semiconductor composite materials can effectively improve the photoelectric conversion efficiency of solar cells and reduce production costs. It has important economic and social significance for the sustainable development of human beings, and it is also a very challenging research work. In third-generation solar cells, TiO 2 With the advantages of cheap, non-toxic, rapid charge separation and good stability, it has become the first choice for many semiconductor materials. TiO with one-dimensional structure 2 For example, nanowires, nanotubes, and nanorods have large aspect ratios, specif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G23/053B82Y40/00H01G9/042B01J21/06
Inventor 董立峰孙琼孙先淼
Owner QINGDAO UNIV OF SCI & TECH
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