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Growth method of sapphire crystal

A sapphire crystal and growth method technology, applied in the field of sapphire crystal growth, can solve the problems of dislocation density, optical transmittance and optical uniformity that are difficult to meet the requirements

Inactive Publication Date: 2012-11-21
俞后法
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be seen that the above-mentioned methods have defects and deficiencies to varying degrees, and indicators such as dislocation density, optical transmittance, and optical uniformity are difficult to meet the requirements.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Place the crucible in the crystal growth furnace so that the center of the crucible coincides with the geometric center of the induction coil of the crystal growth furnace; place a two-cavity mold in the crucible so that the center of the mold coincides with the center of the crucible. Put the alumina powder with a purity of 99.9% in the crucible; seal the crystal growth furnace and vacuumize it to a degree of 1*10 -3 Pa, then fill the crystal growth furnace with high-purity argon gas to keep the pressure in the crystal growth furnace at 0.001 MPa; heat through the induction coil to melt the high-purity alumina powder; slowly move the crystal pulling rod downward until the crystal growth furnace is pulled The crystal rod stops after contacting the high-purity alumina liquid in the mold; the crystal rod is pulled up at 1mm / hr, and slowly cooled to obtain the finished product.

[0028] Because the mold used in the present invention is a two-cavity mold, two wafers can be ...

Embodiment 2

[0034] The crucible is placed in the crystal growth furnace so that the center of the crucible coincides with the geometric center of the induction coil of the crystal growth furnace; a three-cavity mold is placed in the crucible so that the center of the mold coincides with the center of the crucible. Put the alumina powder with a purity of 99.99% in the crucible; seal the crystal growth furnace, and vacuum it to a degree of 2*10 -3 Pa, then fill the crystal growth furnace with high-purity argon gas to keep the pressure in the crystal growth furnace at 0.02 MPa; heat through the induction coil to melt the high-purity alumina powder; slowly move the crystal pulling rod downward until the crystal growth furnace is pulled The crystal rod stops after contacting the high-purity alumina liquid in the mold; the crystal rod is pulled up at 30mm / hr, and slowly cooled to obtain the finished product.

[0035] Because the mold used in the present invention is a three-cavity mold, three w...

Embodiment 3

[0041] The crucible is placed in the crystal growth furnace so that the center of the crucible coincides with the geometric center of the induction coil of the crystal growth furnace; a three-cavity mold is placed in the crucible so that the center of the mold coincides with the center of the crucible. Put the alumina powder with a purity of 99.999% in the crucible; seal the crystal growth furnace and vacuumize it to a degree of 3*10 -3 Pa, and then fill the crystal growth furnace with high-purity argon gas to keep the pressure in the crystal growth furnace at 0.05MPa; heat through the induction coil to melt the high-purity alumina powder; slowly move the crystal pulling rod downward until the crystal growth furnace is pulled The crystal rod stops after contacting the high-purity alumina liquid in the mold; the crystal rod is pulled up at 60mm / hr, and slowly cooled to obtain the finished product.

[0042] Because the mold used in the present invention is a three-cavity mold, t...

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PUM

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Abstract

The invention discloses a growth method of sapphire crystal, and relates to the technical field of the manufacture of sapphire crystal. The method comprises the following steps: (1) placing a crucible in a crystal growth furnace to coincide the crucible center with a geometry center of an induction coil of the crystal growth furnace; and placing a die in the crucible to coincide the mold center with the crucible center; (2) placing a high-purity alumina powder in the crucible; (3) sealing the crystal growth furnace, and vacuumizing; (4) introducing high-purity argon gas into the crystal growth furnace; (5) heating by the induction coil to completely melt the high-purity alumina powder; (6) slowly moving a crystal pulling rod downward, until the crystal pulling rod contacts with the high-purity alumina liquid in the die; and (7) pulling the crystal rod upward to obtain a finished product. The product obtained by the invention has indicators, such as dislocation density, optical transmittance and optical uniformity, better than those of the products obtained by prior art.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal production, in particular to a method for growing a sapphire crystal. Background technique [0002] Sapphire is a single crystal of aluminum oxide, also known as corundum. Sapphire crystal has excellent optical properties, mechanical properties and chemical stability, high strength, high hardness, erosion resistance, and can work under high temperature conditions close to 2000 degrees, so it is widely used in infrared military devices, satellite space technology, high Window material for intensity lasers. Sapphire crystal's unique lattice structure, excellent mechanical properties, and good thermal properties make it the most ideal substrate material for practical semiconductor light-emitting diodes, large-scale integrated circuits SOI and SOS, and superconducting nanostructure films. Therefore, the growth method of sapphire crystal has become a hot spot in the research and exploration ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/20
Inventor 俞后法
Owner 俞后法
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