CuMO2 and preparation method, and light emitting device

A light-emitting device and salt solution technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., to achieve the effects of improving mobility, improving injection capacity, and improving stability

Active Publication Date: 2019-07-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In current QLED devices, due to the acidity and easy water absorption of the PEDOT:PSS hole injection layer, the ITO and the device are damaged and attenuated to varying degrees, so the stability of the device needs to be improved.

Method used

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  • CuMO2 and preparation method, and light emitting device
  • CuMO2 and preparation method, and light emitting device
  • CuMO2 and preparation method, and light emitting device

Examples

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preparation example Construction

[0018] The embodiment of the present invention provides a CuMO 2 The preparation method comprises the following steps:

[0019] S01. Provide divalent copper salt solution, under inert atmosphere, add reducing agent in described divalent copper salt solution, the copper ion in described divalent copper salt generates cuprous ion under the effect of reducing agent, obtains Copper ion solution;

[0020] S02. Provide M salt solution, the M is selected from one of Ga, In, Cr, Al, and the pH value of the M salt solution is 5-6.5; under an inert atmosphere, add the M salt solution In the cuprous ion solution, the heating reaction generates CuMO 2 .

[0021] The CuMO provided by the embodiment of the present invention 2 The preparation method, using the solution method, after reducing the divalent copper ions to cuprous ions, mixed with the M salt solution to prepare CuMO 2 . The reaction conditions of this method are mild, and the prepared CuMO 2 , has good dispersion properti...

Embodiment approach

[0044] As an embodiment, the preparation method of the QLED device includes the following steps:

[0045] E01. providing an anode substrate, and sequentially preparing a hole injection layer on the anode substrate;

[0046] E02. Depositing CuMO on the hole injection layer 2 , preparing the hole transport layer;

[0047] E03. Prepare a quantum dot light-emitting layer, an electron transport layer and a cathode sequentially on the hole transport layer.

[0048] As another embodiment, the preparation method of the QLED device includes the following steps:

[0049] Q01. Provide a cathode substrate, and sequentially prepare an electron transport layer and a quantum dot light-emitting layer on the cathode substrate;

[0050] Q02. Prepare a hole transport layer on the quantum dot light-emitting layer;

[0051] Q03. Prepare a hole injection layer and an anode sequentially on the hole transport layer.

[0052] Specifically, in the above two methods, the materials of each layer are...

Embodiment 1

[0058] a CuMO 2 The preparation method comprises the following steps:

[0059] Dissolve 5mmol cupric chloride in 5ml water to configure cupric chloride solution (solution A), pass inert gas to get rid of dissolved oxygen in water; then dissolve weak reducing agent, such as 10mmol sodium thiosulfate, into 5ml water to configure weak reducing agent solution (B solution), through an inert gas, to get rid of the oxygen therein. Dissolve 5mmol gallium chloride into 5ml aqueous solution, adjust its pH to 5-6.5, configure solution C, and pass through a large amount of inert gas to exclude dissolved oxygen in water.

[0060] Add solution B to solution A and stir to react, so that divalent copper is reduced to monovalent copper. After the reaction is complete, then add solution C and stir thoroughly. Then the obtained mixed solution was added into the reaction kettle, heated and reacted at 200° C. for 2 h, and finally the precipitate obtained by the reaction was washed with ammonia w...

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Abstract

The present invention provides a preparation method of CuMO2. The method comprises the following steps of: providing a cupric salt solution, in an inert atmosphere, adding a reducing agent in the cupric salt solution, allowing copper ions in the cupric salt to generate cuprous ions under the effect of the reducing agent to obtain a cuprous ion solution; providing an M salt solution, wherein M is one selected from the group of Ga, In, Cr and Al, and the pH value of the M salt solution is 5-6.5; and in the inert atmosphere; and adding the M salt solution into the cuprous ion solution for heatingreaction to generate CuMO2.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a CuMO 2 Its preparation method and light-emitting device. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have excellent characteristics such as narrow FWHM (width at half maximum), tunable color, and solution-based preparation, making them candidates for next-generation display technologies. Therefore, different researchers study QLEDs from different angles, including research on QDs (quantum dots), HTL (hole transport layer), ETL (electron transport layer) and electrodes; Stability studies, and the most commercial concern in these studies is the stability of the device. In current QLED devices, due to the acidity and easy water absorption of the PEDOT:PSS hole injection layer, the ITO and the device are damaged and attenuated to varying degrees, so the stability of the device needs to be improved. In the current reports on replacing PEODT:PSS, metal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54C01G3/00
CPCC01G3/00H10K50/15H10K2102/00
Inventor 王宇曹蔚然
Owner TCL CORPORATION
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