SOI (Silicon-On-Insulator) based giant-piezoresistive-effect micro gyroscope

Abstract

The invention discloses an SOI (Silicon-On-Insulator) based giant-piezoresistive-effect micro gyroscope. The main structure comprises a bonding base plate and a micro gyroscope angular speed sensitive body, wherein a rectangular bottom slot is etched in a middle position of the upper surface of the bonding base plate; and the micro gyroscope angular speed sensitive body is arranged on the upper surface of the bonding base plate and is connected with the bonding base plate. The micro gyroscope angular speed sensitive body further comprises a fixed comb tooth electrode anodes distributed on the supper surface at the left and right sides of the bonding base plate, comb tooth electrode cathodes distributed on the upper surface at the front and rear sides, fixed comb tooth structures arranged on the upper surfaces of the fixed comb tooth electrode anodes, fixed seats arranged on the upper surfaces of the comb tooth electrode cathodes and a sensitive mass block correspondingly arranged above the bottom slot, and damping holes are evenly distributed on the upper surface of the sensitive mass block; the sensitive mass block is connected with the fixed seats through combination beams; and the detection beam roots of the combination beams are provided with silicon nanowire resistors as sensitive mechanisms. The micro gyroscope according to the embodiment of the invention adopts the overall structure design, has reasonable and compact structure, simple detection circuit, convenience for use and good reliability and is applicable to miniaturization.

Description

technical field [0001] The invention relates to the research field of key components of micro-inertial navigation, in particular to an SOI-based micromechanical gyroscope with giant piezoresistive effect. Background technique [0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is based on the principle of piezoresistive effect of highly doped silicon. Since the resistance gauge coefficient of silicon piezoresistors is small, with the sensor size The varistors of the traditional doping process can no longer meet the requirements of modern high-sensitivity testing; the improvement of capacitive precision is to increase the capacitance area. Due to the miniaturization of the device, its accuracy is reduced by the reduction of the effective capacitance area. Difficult to improve. [0003] The measurement of the angular velocity of the micro-mechanical gyroscope is completed by the det...

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Problems solved by technology

[0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is based on the principle of piezoresistive effect of highly doped silicon. Since the resistance gauge coefficient of silicon piezoresistors is small, with the sensor size The varistors of the traditional doping process can no longer meet the requirements of modern high-sensitivity testing; the improvement of capacitive precision is to increase the capacitance area. Due to the miniaturization of the device, its accuracy is reduced by the reduction of the effective capacitance area. Difficult to improve

[0003] The measurement of the angular velocity of the micro-mechanical gyroscope is completed by the detection device to realize the force-electric conversion. Its sensitivity and resolution are very important. Due to the miniaturization and integration of the gyroscope, the sensitive area of ​​the detection is reduced accordingly, so the detection The sensitivity, resolution and other indicators of gyroscopes have reached the limit state of sensitive area detection, which limits the further improvement of gyroscope detection accuracy, and it is difficult to meet the needs of modern military and civilian equipment.

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