Fast switching thyristor with subsection width-variable involute multi-finger amplifying gate pole structure

Abstract

The invention discloses a fast switching thyristor with a subsection width-variable involute multi-finger amplifying gate pole structure. The fast switching thyristor is provided with amplifying gate poles G, a cathode K and an anode A; the amplifying gate poles G are distributed in an involute-shaped radiation manner; and the width of the involute-shaped part at the center of the amplifying gate poles G is greater than the width thereof on the outer side of the amplifying gate poles G. In the fast switching thyristor with a subsection width-variable involute multi-finger amplifying gate pole structure, by changing the involute-shaped gate pole structure, the properties of the fast switching thyristor such as the gate pole control opening time, di / dt tolerance, gate pole control opening uniformity, opening dynamic thermal symmetry, high-temperature reliability, surge current and the like are obviously improved.

Description

technical field [0001] The invention relates to a fast thyristor with segmented width variable involute multi-finger amplifying gate structure. Background technique [0002] The operating frequency of traditional fast thyristors is generally around 400HZ. To increase the operating frequency of fast thyristors, the switching speed of fast thyristors must be increased first, that is, the turn-off time and turn-on time of fast thyristors must be shortened. However, the various electrical parameters of the thyristor are a unity of interdependence and mutual restriction, mutual generation and restraint, and the change of one parameter often leads to the change of many parameters. For example, the shortening of the turn-off time and turn-on time of the device will also cause the deterioration of a series of electrical parameters that are critical to frequency characteristics, such as on-state voltage drop, expansion speed, di / dt, switching loss, and blocking voltage. [0003] In ...

AI Technical Summary

Problems solved by technology

Although the thyristor with the amplified gate of the involute structure can improve the working performance within a certain range, since the fingers of the involute multi-fingered amplified gate are very long, the involute multi-fingered amplified gate assists in triggering conduction During the dynamic process, the parasitic resistance of the amplified gate finger limits the trigger current intensity of the thyristor region at the end of the finger, resulting in long gate control turn-on time, low di / dt tolerance, poor gate control turn-on uniformity, and turn-on dynamics. Disadvantages such as poor thermal symmetry, poor high temperature reliability, and low surge current

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