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A storage element and storage layer technology, applied in electrical elements, information storage, static memory, etc., can solve problems such as power consumption reduction and capacity increase, and achieve the effect of enhanced perpendicular magnetic anisotropy and high information retention characteristics
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AI technical title is built by PatSnap AI team. It summarizes the technical point description of the patent document.
A storage element and storage layer technology, applied in electrical elements, information storage, static memory, etc., can solve problems such as power consumption reduction and capacity increase, and achieve the effect of enhanced perpendicular magnetic anisotropy and high information retention characteristics
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Embodiment Construction
[0029] Hereinafter, embodiments of the present invention will be described in the following order.
[0030]
[0031]
[0032]
[0033]
[0034]
[0035] First, the structure of a storage device according to an embodiment of the present invention will be described.
[0036] exist figure 1 with figure 2 A schematic diagram of a storage device according to an embodiment is shown in . figure 1 is the perspective view, figure 2 is a cross-sectional view.
[0037] Such as figure 1 As shown, in the memory device according to this embodiment, the memory element 3 of the ST-MRAM capable of retaining information by the magnetization state is arranged at the intersection of two kinds of address lines (such as a word line and a bit line) perpendicularly intersecting each other nearby.
[0038] That is, drain regions 8 , source regions 7 , and gate electrodes 1 constituting selection transistors to select respective memory devices are formed in regions of a semiconductor ...
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PUM
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Abstract
The invention provides a storage element and a storage device. Wherein, the storage element includes: a storage layer having a magnetization perpendicular to its film surface and retaining information through the magnetization state of a magnetic substance; a magnetization pinning layer having a vertical magnetization on its film surface; a non-magnetic material intermediate layer, disposed between the storage layer and the magnetized pinning layer; and a cap layer, disposed near the storage layer and on the side opposite to the intermediate layer, and includes at least two oxides Floor. The storage element is configured to store the magnetization of the storage layer by reversing the magnetization of the storage layer by using spin torque magnetization reversal generated by a current flowing in the lamination direction of the layer structure including the storage layer, the intermediate layer, and the magnetization pinned layer. information.
Description
technical field [0001] The present invention relates to a memory element and a memory device including the memory element, wherein the memory element includes a memory layer storing the magnetization state of a ferromagnetic layer as information and a magnetization pinned layer whose magnetization direction is pinned. ), and the memory element changes the magnetization direction of the memory layer by the flowing current. Background technique [0002] Along with the remarkable development of various information devices (including large-capacity servers, mobile terminals, etc.), elements forming these devices (such as memories and logic circuits) are also required to improve performance, such as increased integration, increased operating speed, and functional consumption reduction. In particular, advances in nonvolatile semiconductor memory have drawn attention, and first, there is an increasing demand for flash memory serving as large-capacity file storage, thereby replacin...
Claims
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