A kind of preparation method of SMCO perpendicular magnetic anisotropy film

An anisotropic, magnetic thin film technology, applied in the application of magnetic film to substrate, vacuum evaporation coating, coating, etc., can solve the film grain growth product performance, unfavorable efficient and accurate preparation, film forming factors Many other problems, to avoid excessive grain growth, improve magnetic properties, and shorten the processing time.

Active Publication Date: 2021-07-16
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The core of this method for preparing SmCo perpendicular magnetic anisotropic thin films is to design the film structure, but due to the complex film structure, many factors affecting film formation, and cumbersome operations, it is not conducive to efficient and accurate preparation, and the Sm element is easy to oxidize at high temperature. Long-term heat preservation will cause excessive growth of film grains and result in product performance degradation

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  • A kind of preparation method of SMCO perpendicular magnetic anisotropy film
  • A kind of preparation method of SMCO perpendicular magnetic anisotropy film
  • A kind of preparation method of SMCO perpendicular magnetic anisotropy film

Examples

Experimental program
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Effect test

Embodiment 1

[0039] A kind of SmCo perpendicular magnetic anisotropy film, its preparation method comprises the following steps:

[0040] 1) A magnetic thin film of Cr(20nm) / Cu(40nm) / SmCo(200nm) / Cr(20nm) structure was prepared by a magnetron sputtering system in an argon environment, and the substrate was a single crystal Si(100) substrate, The size is 10mm×10mm, the purity is 99.9%, and it is ultrasonically cleaned with 5% hydrofluoric acid, acetone and absolute ethanol before use. The background vacuum of the magnetron sputtering system is 8×10 -5 ~1×10 -4 Pa, the working pressure of argon during the sputtering process is kept at 0.5Pa, the vertical distance between the target and the single crystal Si(100) substrate is controlled at 6cm, the Cu target and the SmCo (Sm:Co=1:4) alloy target are used DC sputtering, sputtering power is 60W, Cr target adopts radio frequency sputtering, sputtering power is 120W;

[0041] 2) Put the magnetic film in step 1) into an infrared annealing furnace...

Embodiment 2

[0045] A kind of SmCo perpendicular magnetic anisotropy film, its preparation method comprises the following steps:

[0046]1) A magnetic thin film of Cr(20nm) / Cu(40nm) / SmCo(200nm) / Cr(20nm) structure was prepared by a magnetron sputtering system in an argon environment, and the substrate was a single crystal Si(100) substrate, The size is 10mm×10mm, the purity is 99.9%, and it is ultrasonically cleaned with 5% hydrofluoric acid, acetone and absolute ethanol before use. The background vacuum of the magnetron sputtering system is 8×10 -5 ~1×10 -4 Pa, the working pressure of argon during the sputtering process is kept at 0.5Pa, the vertical distance between the target and the single crystal Si(100) substrate is controlled at 6cm, the Cu target and the SmCo (Sm:Co=1:4) alloy target are used DC sputtering, sputtering power is 60W, Cr target adopts radio frequency sputtering, sputtering power is 120W;

[0047] 2) Put the magnetic film in step 1) into an infrared annealing furnace,...

Embodiment 3

[0051] A kind of SmCo perpendicular magnetic anisotropy film, its preparation method comprises the following steps:

[0052] 1) A magnetic thin film of Cr(20nm) / Cu(40nm) / SmCo(200nm) / Cr(20nm) structure was prepared by a magnetron sputtering system in an argon environment, and the substrate was a single crystal Si(100) substrate, The size is 10mm×10mm, the purity is 99.9%, and it is ultrasonically cleaned with 5% hydrofluoric acid, acetone and absolute ethanol before use. The background vacuum of the magnetron sputtering system is 8×10 -5 ~1×10 -4 Pa, the working pressure of argon during the sputtering process is kept at 0.5Pa, the vertical distance between the target and the single crystal Si(100) substrate is controlled at 6cm, the Cu target and the SmCo (Sm:Co=1:4) alloy target are used DC sputtering, sputtering power is 60W, Cr target adopts radio frequency sputtering, sputtering power is 120W;

[0053] 2) Put the magnetic film in step 1) into an infrared annealing furnace...

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Abstract

The invention discloses a method for preparing a SmCo perpendicular magnetic anisotropy film, which comprises the following steps: 1) preparing a magnetic film material with a Cr / Cu / SmCo / Cr structure by magnetron sputtering; The film material is put into an infrared annealing furnace, and the temperature in the furnace is raised to 350-500°C at a heating rate of 5-20°C / s, and then kept for 5-10 minutes. The preparation method of the invention is simple and easy to control, has short processing time, low processing cost and high processing efficiency, and the prepared SmCo thin film has large perpendicular magnetic anisotropy and excellent magnetic properties.

Description

technical field [0001] The invention relates to a preparation method of a SmCo perpendicular magnetic anisotropy film, which belongs to the technical field of magnetic materials. Background technique [0002] With the advancement of science and technology, the storage density of hard disks is changing day by day, and the continuous increase in magnetic recording surface density will inevitably touch the physical limit, that is, produce superparamagnetic effects. In order to break through the limit of magnetic recording density caused by the superparamagnetic effect, heat-assisted magnetic perpendicular recording technology has attracted extensive attention from academia and industry. [0003] In the heat-assisted magnetic recording process, the particles near the recording area will inevitably be affected by the heat dissipation of the laser beam and cause information loss. Therefore, the recording medium material should have adjustable coercive force and excellent thermal d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/58C23C14/35H01F41/18
CPCC23C14/165C23C14/352C23C14/5806H01F41/18
Inventor 邱兆国魏卢曾德长郑志刚洪源
Owner SOUTH CHINA UNIV OF TECH
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