Magnetic tunnel junction with strong perpendicular magnetic anisotropy and high overturning efficiency

Abstract

The invention discloses a magnetic tunnel junction with strong perpendicular magnetic anisotropy and high overturning efficiency, which comprises a spin-orbit coupling layer, a free layer, a barrier layer and a reference layer sequentially superposed, wherein the spin-orbit coupling layer comprises a first heavy metal layer and a second heavy metal layer, the second heavy metal layer is positioned between the first heavy metal layer and the free layer, and the first heavy metal layer and the second heavy metal layer are made of different materials and are used for cooperatively improving the contribution of the coupling action item between the electron orbits to the perpendicular magnetic anisotropy. According to the magnetic tunnel junction, the double heavy metal layers made of different materials are adopted in the spin-orbit coupling layer, so that the contribution of a coupling action item between electron orbits to the perpendicular magnetic anisotropy can be improved, the perpendicular magnetic anisotropy and the overturning efficiency can be improved, the thermal stability of the magnetic memory in the miniaturization process can be improved, the power consumption can be reduced, the structure is simple and processing and manufacturing are convenient.

Description

technical field [0001] The invention belongs to the technical field of spin electronics, and in particular relates to a magnetic tunnel junction with strong perpendicular magnetic anisotropy and high turnover efficiency. Background technique [0002] Magnetic random access memory (MRAM) has the advantages of non-volatility, high-speed reading and writing, low power consumption, and unlimited erasing and writing, and has attracted widespread attention. The core device of MRAM is a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ). MTJ is a sandwich-like film structure, including reference layer, barrier layer and free layer. In MTJs, the storage of information depends on the ability to maintain the magnetization state in the free layer, that is, thermal stability. The thermal stability of the free layer is measured by the thermal stability factor (Thermal Stability Factor), which can usually be expressed as Δ=KV / K B T, where K is the effective magnetic anisotropy co...

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Problems solved by technology

However, the prior art often improves the thermal stability of the magnetic tunnel junction by increasing the interface between the free layer and the magnesium oxide layer (such as forming a multi-interface structure of free layer / magnesia layer / free layer / magnesia layer), thereby increasing The number of thin film layers is reduced, and there are unfavorable factors such as complex structure, increased preparation difficulty, increased resistance, and decreased tunnel magnetoresistance (TMR).

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