Manufacture method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as indeterminacy, and achieve the effects of preventing the introduction of thermal strain, high reliability, and prolonging failure life.

Active Publication Date: 2015-04-08
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] As for the structure of the semiconductor device 200, it cannot be determined uniformly from the structure of the module and the materials used for the position that causes failure during high-temperature operation.

Method used

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  • Manufacture method of semiconductor device
  • Manufacture method of semiconductor device
  • Manufacture method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] The embodiments are explained in the following examples.

[0065]

[0066] Figure 1 ~ Figure 6 This is a method of manufacturing a semiconductor device according to an embodiment of the present invention, and is a cross-sectional view of the main part of the manufacturing process shown in terms of process steps. The semiconductor device is, for example, a power module in which an IGBT chip and a diode are connected in anti-parallel.

[0067] First, like figure 1 As shown, the back electrode 6 of the semiconductor chip 5 is fixed with the bonding material 8 on the conductive pattern 4a of the conductive patterned insulating substrate 3 fixed on the heat dissipation base plate 1 by the bonding material 2. In addition, an external lead-out terminal 9 is fixed to the conductive pattern 4b. This member composed of the heat dissipation base plate 1, the insulating substrate 3 with a conductive pattern, the semiconductor chip 5, and the external lead-out terminal 9 is referred ...

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PUM

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Abstract

The invention provides a manufacture method of a semiconductor device, which can improve the reliability of a surface electrode of a semiconductor chip and a contact part of a metal wire by making the cooling speed from thermal aging treatment temperature proper. An aluminum wire (10) added with Ni is bonded on an Al-Si electrode film (surface electrode 7) of the semiconductor chip (5), the thermal aging treatment is performed at a high temperature belong 300 DEG C, and then the semiconductor device is gradually cooled according to the cooling speed below 1 DEG C / min, thus the process stress during the bonding process is removed, and the thermal stress guided by cooling after thermal aging treatment is suppressed, therefore the high reliability semiconductor device (100) is provided.

Description

Technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for bonding a metal wire to a surface electrode of a semiconductor chip. Background technique [0002] In recent years, there has been a demand for miniaturization and weight reduction of automobile instrument control devices or electric vehicle drive control devices. The drive control device uses a semiconductor device that switches a large current at high speed in order to obtain AC (electricity) for driving the motor from a DC power source such as a battery. In response to the increase in power, that is, the increase in the operating current of electronic components, aluminum is mainly used for electrical connections between semiconductor chips in semiconductor devices, and between semiconductor chips and insulating substrates with conductive patterns fastened to semiconductor chips. Composition of wire. [0003] Such semiconductor devices are required t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L2924/1305H01L2224/45124H01L2224/48137H01L2224/78313H01L2224/48227H01L2924/13091H01L2924/12032H01L2224/48091H01L2224/73265H01L2224/48139H01L2224/85181H01L2224/32225H01L2924/13055H01L2224/7855H01L2224/92247H01L2224/06181H01L2224/0603H01L2224/85H01L2224/78H01L2924/00014H01L2924/00H01L2924/00012
Inventor 外园洋昭酒井茂西村知紘
Owner FUJI ELECTRIC CO LTD
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