A Cutting Method of Luminous Originals with Different Cutting Depths

Abstract

The invention provides a luminous element cutting method with different cutting depths. The luminous element cutting method comprises the following steps of: manufacturing a luminous element comprising a plurality of luminous epitaxial units on the surface of a semiconductor substrate; defining a plurality of cutting passages according to each luminous epitaxial unit and preparing a plurality of stop layers which are arranged at interval on each cutting passage; emitting a plurality of laser pulses to the luminous element from the front face according to each cutting passage to form a plurality of shallow cutting holes in the luminous element and the semiconductor substrate below the stop layer, forming a plurality of deep cutting holes in the luminous element and the semiconductor substrate which are not stopped by the stop layer and then removing each stop layer; next manufacturing an electrode to form the luminous unit; and finally, cracking the luminous element. According to the luminous element cutting method, the difficulty in cracking of a wafer in a subsequent process is guaranteed, and the cracking efficiency of the wafer during cracking is increased; and since a part of shallow cutting holes is formed, the absorption of the cutting holes to light can be reduced, and the luminous efficiency is increased.

Description

technical field [0001] The invention relates to a cutting method of a semiconductor device, in particular to a cutting method of a light-emitting element with different cutting depths. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other sem...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a cutting method for light-emitting elements with different cutting depths, which is used to solve the problem that in the prior art, deep cutting is likely to cause wafer cracks and lead to a decrease in luminous efficiency, and shallow cutting is easy. The problem that the wafer is difficult to break when causing subsequent splits

Images