Cutting method of light-emitting element

A cutting method and original technology, applied in the direction of electrical components, semiconductor devices, laser welding equipment, etc., can solve the problems of difficult cracking of wafers, reduced luminous efficiency, wafer cracking, etc. The effect of efficiency

Active Publication Date: 2015-04-01
宁波安芯美半导体有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a cutting method for light-emitting elements, which is used to solve the problem that in the prior art, deep cutting is likely to cause wafer cracks and lead to a decrease in luminous efficiency, and shallow cutting is likely to cause subsequent splits. Difficult chip breakage

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  • Cutting method of light-emitting element
  • Cutting method of light-emitting element
  • Cutting method of light-emitting element

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Embodiment Construction

[0033] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] Please refer to 3~ Figure 8 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ...

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Abstract

The invention provides a cutting method of a light-emitting element, comprising the following steps of: manufacturing a light-emitting element comprising a plurality of light-emitting epitaxial units on the surface of a semiconductor substrate; then, emitting a plurality of laser pulses to the light-emitting element from the front side of each light-emitting epitaxial unit; adjusting a focus distance of laser to enable a plurality of the laser pulses to penetrate through the light-emitting element and form a cutting array formed by a plurality of cutting holes with different depths in the semiconductor substrate; then, preparing a light-emitting unit on a manufactured electrode of each light-emitting epitaxial unit; and finally, cracking the light-emitting element according to the cutting array to obtain a plurality of mutually-separated light-emitting units. According to the cutting method of the light-emitting element, the cracking efficiency of a wafer in a cracking process is guaranteed and the cracking efficiency of the wafer is improved; and parts of shallow cutting holes are formed so that the absorption of the cutting holes to light can be reduced and the light-emitting efficiency is improved.

Description

technical field [0001] The invention relates to a cutting method of a semiconductor device, in particular to a cutting method of a light emitting element. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its core is a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/50H01L21/78H01L33/00B23K26/38
Inventor 单立伟
Owner 宁波安芯美半导体有限公司
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