Method for overcoming exposure region defect caused by underexposure

A technology of exposure area and underexposure, which is applied in the field of solving exposure area defects caused by underexposure, can solve problems such as exposure area defects, and achieve the effects of solving exposure area defects, eliminating photoresist residues, and saving process cycle time

Inactive Publication Date: 2013-01-09
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] The purpose of the present invention is to propose a method for solving the defects in the exposure area caused by underexposure, which can eliminate the photoresist residue caused by underexposure, thereby solving the defect in the exposure area after etching

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  • Method for overcoming exposure region defect caused by underexposure
  • Method for overcoming exposure region defect caused by underexposure
  • Method for overcoming exposure region defect caused by underexposure

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Embodiment Construction

[0023] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0024] figure 2 It is a flow chart of a method for solving exposure area defects caused by underexposure provided by an embodiment of the present invention, and the method includes:

[0025] S201, increasing the actually formed critical dimension by reducing the exposure energy in the exposure process.

[0026] In the case of a given mask, when the critical dimension of the mask is smaller than the critical dimension required for actual production, the actual critical dimension of the product will be increased by reducing the exposure energy.

[0027] When the exposure energy is adjusted too much, it often leads to underexposure, which will cause photoresist residues to remain after development, reducing the accuracy of the subsequent etching process.

[0028] S202. In the etching process, firstl...

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Abstract

The invention discloses a method for overcoming an exposure region defect caused by underexposure. In an exposure working procedure, an actually formed critical size is enlarged by reducing exposure energy; in an etching working procedure, photoresist residues on a layer to be etched are removed by utilizing plasma; and then the layer to be etched is continuously etched. According to the method, the photoresist residues produced by underexposure can be eliminated, so that the exposure region defect caused by etching can be overcome; a phenomenon of high cost of a new mask plate caused by correcting the critical size is avoided; the production cost is saved; and the period time of the working procedure is shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing process, in particular to a method for solving defects in exposure regions caused by underexposure. Background technique [0002] In the case of a given mask, the lithography module often uses the method of adjusting the exposure energy to ensure that the critical dimension reaches the expected level, but when the difference between the critical dimension of the mask and the critical dimension required for actual production is too large, excessive Adjusting the exposure energy often results in underexposure, which can lead to photoresist residue after development and lead to etch defects in exposed areas during subsequent etching. [0003] For example, the critical dimension of the mask plate is given as 0.48um. In order to meet the production demand, adjust the exposure energy so that the critical dimension detected after development is 0.52um. Insufficient exposure will lead ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/20H01L21/027
Inventor 周耀辉
Owner CSMC TECH FAB2 CO LTD
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