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Magneto-resistive random access memory and manufacturing method thereof

A random access memory, magnetoresistive technology, applied in static memory, digital memory information, magnetic field controlled resistors, etc., can solve problems such as affecting MRAM power consumption

Active Publication Date: 2016-07-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Magneto-resistive random access memory and manufacturing method thereof
  • Magneto-resistive random access memory and manufacturing method thereof
  • Magneto-resistive random access memory and manufacturing method thereof

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Embodiment Construction

[0020] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0021] figure 1 is a perspective view of an exemplary MRAM cell according to an embodiment. The MRAM cell 100 has an MTJ 102 , a top electrode 104 , a bottom electrode 106 and a (magnetic field) sensing line 108 . MTJ 102 includes a free layer, an insulator (spacer or tunnel barrier) 112 , and a pinned layer 114 . The sensing line is on one side of MTJ102.

[0022] The free layer 110 and pinned layer 114 form two ferromagnetic plates, each of which can have a magnetic field separated by a thin insulator 112 . The pinned layer 114 has a fixed magnetic polarity, while ...

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Abstract

The present invention relates to a magnetoresistive random access memory (MRAM) unit, which includes a magnetic tunnel junction (MTJ), a top electrode arranged above the MTJ, a bottom electrode arranged below the MTJ, and an induction line arranged on one side of the MTJ . The sensing line is configured to induce a vertical magnetic field at the MTJ. The invention also discloses the magnetoresistive RAM and its manufacturing method.

Description

technical field [0001] The present invention relates generally to integrated circuits, and more particularly to magnetoresistive random access memory (MRAM). Background technique [0002] Magneto-resistive random access memory (MRAM) stores data in a magnetic storage element such as a magnetic tunnel junction (MTJ). Reading of the MRAM is accomplished by measuring the resistance of the MRAM cell, which changes according to the magnetic field polarity of the MTJ located in the MRAM cell. Data is written into the MRAM cell by storing the magnetic field polarity in the MTJ using a current (threshold / critical current). The threshold current affects the power consumption of the MRAM. Contents of the invention [0003] In order to solve the defects existing in the prior art, according to one aspect of the present invention, a magnetoresistive random access memory (MRAM) unit is provided, comprising: a magnetic tunnel junction (MTJ); a top electrode disposed above the MTJ; a bo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16H10B69/00H10B20/00
CPCG11C11/161H10N50/10H10N50/01G11C11/15Y10S977/935H10B61/00
Inventor 刘明德江典蔚高雅真陈文正
Owner TAIWAN SEMICON MFG CO LTD