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Determining and using soft data in memory devices and systems

A technology of memory and soft data, which is applied in the direction of static memory, read-only memory, digital memory information, etc., and can solve problems such as error sensing of memory cells

Active Publication Date: 2013-01-16
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, when used during a sensing operation performed after the change in stored charge occurs, the previously used sensing voltage may result in false sensing of the memory cell

Method used

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  • Determining and using soft data in memory devices and systems
  • Determining and using soft data in memory devices and systems
  • Determining and using soft data in memory devices and systems

Examples

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Embodiment Construction

[0012] The present invention includes methods, devices and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuit is configured to perform a number of sensing operations on the memory cell using a number of sensing voltages to determine soft data associated with a target state of the memory cell, based at least in part on the determined soft data to adjust the sense voltage used to determine the target state.

[0013] Soft data associated with a memory cell may indicate the location of the memory cell's threshold voltage (Vt) within a Vt distribution representative of a target state to which the memory cell was programmed, as will be described further herein. Additionally, soft data associated with a memory cell can indicate a probability of whether the memory cell's Vt corresponds to a target state to which the memory cell was programme...

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Abstract

The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data.

Description

technical field [0001] The present invention relates generally to semiconductor memory devices, methods and systems, and more particularly to methods, devices and systems for determining and using soft data in memory devices and systems. Background technique [0002] Memory devices are often provided as internal semiconductor integrated circuits and / or external removable devices in computers or other electronic devices. There are many different types of memory including random access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), phase change random access memory ( PCRAM) and flash memory, etc. [0003] Flash memory devices can be used in a wide range of electronic applications as both volatile and non-volatile memory. Flash memory devices typically use one-transistor memory cells that allow for high memory density, high reliability, and low power consumption. Uses of flash memory include those ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/06
CPCG11C11/5628G11C11/26G11C16/26G11C7/14G11C11/5642G11C16/349G11C29/021G11C29/028G11C29/42G11C29/50004G11C16/06G11C16/34
Inventor 威廉·H·拉德克沈震雷彼得·菲利
Owner MICRON TECH INC
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