Semiconductor device with static discharge protection module and manufacturing method thereof
An electrostatic discharge protection and semiconductor technology, which is applied in the field of semiconductor devices with electrostatic protection modules and their manufacturing fields
Active Publication Date: 2013-01-23
CHENGDU MONOLITHIC POWER SYST
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However, the series resistance and current uniformity of these PN diodes are important factors affecting their ESD protection performance
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[0025] Some embodiments of the present invention will be described in detail below. In the following description, some specific details, such as the specific circuit structure, device structure, process steps and specific parameters of these circuits, devices and processes in the embodiments, are used to provide a better understanding of the embodiments of the present invention . It will be understood by those skilled in the art that embodiments of the invention may be practiced even without some details or in combination with other methods, elements, materials, and the like.
[0026] In the description and claims of the present invention, if words such as "left, right, inside, outside, front, back, up, down, top, above, bottom, under" etc. are used, they are only For ease of description, no inevitable or permanent relative positions of components / structures are indicated. It should be understood by those skilled in the art that such terms are interchangeable under appropria...
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The invention discloses a semiconductor device integrated with a static discharge protection module and a semiconductor transistor as well as a manufacturing method thereof. According to the embodiment of the invention, the static discharge protection module is of a cake shape, and comprises a central doped area of a first conductivity type and a plurality of second conductivity type doped areas and a plurality of first conductivity type doped areas, wherein the plurality of second conductivity-type doped areas and a plurality of first conductivity-type doped areas are arranged alternately around the central doped area; the central doped area covers the whole part below the gate metal welding disc part of the semiconductor transistor and is coupled with the gate metal welding disc part; and source electrode metal of the semiconductor transistor is coupled with the first conductivity-type doped area at the uttermost peripheral of the static discharge protection module. The static discharge protection module not only can protect the gate oxide layer of the semiconductor transistor from being damaged by static discharge, but also has small serial resistance and improved current balance.
Description
technical field [0001] Embodiments of the present invention relate to a semiconductor device, in particular to a semiconductor device with an electrostatic protection module and a manufacturing method thereof. Background technique [0002] Semiconductor devices such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET) and Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOS) have been widely used in the electronics industry. To give a few simple examples, these semiconductor devices can be used in power amplifiers and low noise amplifiers, and can also be used in power conversion circuits as power switches. In order to improve the working stability and safety of these semiconductor devices, it is generally necessary to provide them with an electrostatic discharge (ESD) protection module. [0003] Taking DMOS as a power switch tube as an example, during the transient change process of DMOS turn-off, the vol...
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Patent Timeline
Login to View More IPC IPC(8): H01L27/02H01L27/06H01L21/822
CPCH01L29/66734H01L29/7811H01L29/7813H01L29/0696H01L29/41766H01L29/4236H01L29/4238H01L29/66727H01L29/7808H01L29/66121H01L29/861H01L29/0692H01L29/7801H01L29/66674
Inventor 马荣耀李铁生王怀锋李恒银发友
Owner CHENGDU MONOLITHIC POWER SYST