Grid voltage bootstrapped switch with low on-resistance and substrate bias effect elimination method thereof
A low on-resistance, gate voltage bootstrap technology, applied in the field of integrated circuits, can solve the problems such as the inability of M1 to be effectively turned off and the large on-resistance
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[0024] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, a person of ordinary skill in the art can understand that, in each embodiment of the present invention, many technical details are proposed for the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed by the claims of this application can be realized.
[0025] The first embodiment of the present invention relates to a gate voltage bootstrap switch with low on-resistance, including: a MOS transistor M1 as a switch, and a gate voltage bootstrap circuit connected to the MOS transistor M1. The gate voltage bootstrap circuit and the connection relationship between the gate voltage bootstrap ci...
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