Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Test structure of corrosion time of sacrificial layer and preparation method of mems device

A technology for testing structures and sacrificial layers, which is applied in the direction of microstructure technology, electric solid-state devices, semiconductor devices, etc., can solve problems such as chip damage, lower yield, and increase tape-out time, and achieve improved reliability, high yield, and Uncertainty Reduction Effects

Inactive Publication Date: 2015-07-29
PEKING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method will destroy certain chips, reduce the yield rate, and increase the tape-out time. It is not suitable for MEMS assembly line processing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Test structure of corrosion time of sacrificial layer and preparation method of mems device
  • Test structure of corrosion time of sacrificial layer and preparation method of mems device
  • Test structure of corrosion time of sacrificial layer and preparation method of mems device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The present invention will be described in detail below through specific embodiments and accompanying drawings.

[0034] The corrosion time detection method of the present invention is mainly applicable to MEMS device chips with movable structures processed by surface sacrificial layer integration technology, such as sensors such as accelerometers and gyroscopes, and actuators such as adjustable capacitance structures. Taking the manufacture of a comb-shaped resonator as an example, the manufacture of the corrosion time detection structure and the manufacture of the resonator are combined. The specific process flow is shown in Figure 1, where the left side of the dotted line is the detection structure area, and the right side is the chip main structure area. , which is described as follows:

[0035] 1. Preparation: monocrystalline silicon substrate as the substrate of the chip;

[0036] 2. Deposit the substrate protective layer, including: LPCVD SiO2, with a thickness of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a testing structure for determining the corrosion time of a sacrificial layer in real time. The testing structure comprises a sacrificial layer, an MEMS (Micro-electromechanical System) structural layer and a metal layer which are formed from bottom to top, wherein a metal in the metal layer falls off when the sacrificial layer is corroded. In the testing structure, a dual-material beam is taken as a sensitive element, and testing units are arranged preferably in an array way, so that the reliability of an entire online testing result is improved. A method for preparing an MEMS device by using the structure can be compatible with the conventional sacrificial layer process, the method and the conventional sacrificial layer process can be finished simultaneously, and online monitor of the process is realized. Due to the adoption of the testing structure, the corrosion time of the sacrificial layer can be determined in a non-contact and non-breaking way through a naked-eye observation way, the MEMS process quality and yield can be increased, and the process time is greatly shortened.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system (MEMS) processing technology, is particularly applied in the field of MEMS surface sacrificial layer technology, relates to a test structure of wet etching time in the MEMS surface sacrificial layer technology, and a method for preparing MEMS devices using the test structure. Background technique [0002] Since the 1990s, microelectromechanical systems (MEMS) technology has entered a stage of rapid development, not only because of the novel concept, but also because MEMS devices have the characteristics of miniaturization, integration and better performance compared with traditional devices. Now MEMS has been widely used in automobiles, aerospace, information control, medicine, biology and other fields. MEMS technology is mainly divided into three categories: bulk silicon technology, surface sacrificial layer technology, and some special MEMS processing technology. [0003] The surfa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00G01R33/00
Inventor 赵丹淇张大成何军黄贤杨芳田大宇刘鹏王玮李婷罗葵
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com