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Self-encapsulation preparation method of mems device based on surface sacrificial layer technology

A sacrificial layer and self-encapsulation technology, applied in the process of producing decorative surface effects, metal material coating process, coating, etc., can solve the problem of high packaging requirements, achieve high yield, large commercial value and market , The effect of low process difficulty

Inactive Publication Date: 2015-09-23
PEKING UNIV
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Problems solved by technology

In summary, the existing MEMS infrared sensors have very high requirements for packaging

Method used

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  • Self-encapsulation preparation method of mems device based on surface sacrificial layer technology
  • Self-encapsulation preparation method of mems device based on surface sacrificial layer technology
  • Self-encapsulation preparation method of mems device based on surface sacrificial layer technology

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Embodiment Construction

[0042] The present invention will be described in detail below through specific embodiments and accompanying drawings.

[0043] The infrared chip self-packaging method of the present invention can be applied to MEMS device chips with movable structures processed by surface sacrificial layer integration technology, such as infrared sensors, accelerometers, gyroscopes and other sensors, and actuators such as adjustable capacitance structures. Taking the production of polysilicon / gold dual-material cantilever infrared sensor as an example, the interconnection structure of the capacitive readout method is adopted. The specific process flow is shown in Figure 3, and its description is as follows:

[0044] 1. Preparation sheet: the monocrystalline silicon substrate is used as the substrate 1 of the chip;

[0045] 2. Deposit substrate protection layer, including: LPCVD SiO 2 , with a thickness of That is, the silicon oxide layer 2 in Figure 3(a) is formed; LPCVD Si 3 N 4 , with ...

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Abstract

The invention provides a method for preparing self-packaging of an MEMS device based on a surface sacrificial layer technology. The method comprises that a substrate protective layer, a lower electrode and a lower electrode protective layer are deposited and prepared on a substrate, and the surface of the lower electrode protective layer is subjected to chemical-mechanical polishing; a first sacrificial layer and an MEMS device structural layer are prepared through the surface sacrificial layer technology; a metal layer is deposited on the structural layer; a second sacrificial layer and a packaging layer are prepared through the surface sacrificial layer technology, and interconnection portions in and out of a packaging area are prepared; and all sacrificial layers are subjected to wet etching, and the MEMS device structural layer is released and self-packaging is completed by an adhesion effect. The method is applicable to infrared sensors and the like of MEMS devices with movable structures, so that self packaging of the MEMS devices can be achieved, the packaging period can be shortened, the process quality and the yield are improved, and the packaging cost is reduced.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system (MEMS) processing technology, is particularly applied in the field of MEMS surface sacrificial layer technology, and specifically relates to a method for manufacturing self-encapsulated MEMS devices based on the surface sacrificial layer technology. Background technique [0002] Nowadays, MEMS infrared sensors are widely researched and can be applied in scientific and technological fields such as modern technology, national defense and functions. There are many ways to make an infrared sensor. Since the 1990s, microelectromechanical system (MEMS) technology has entered a stage of rapid development, not only because of the novel concept, but also because MEMS devices have the characteristics of miniaturization, integration and better performance compared with traditional devices. Therefore, miniature infrared sensors based on MEMS technology have also been extensively studied. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 赵丹淇张大成何军黄贤杨芳田大宇刘鹏王玮李婷罗葵
Owner PEKING UNIV
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