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Device used for forming SiN film on substrate

A substrate and thin film technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of high equipment input cost, and achieve the effect of reducing high cost, low input cost and simple structure

Inactive Publication Date: 2013-03-20
ZHONGSHAN CHUANGKE RES TECH SERVICE
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  • Abstract
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  • Claims
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Problems solved by technology

[0002] The traditional device for forming SiN thin film on the substrate is mainly magnetron sputtering coating equipment, the defect is that the equipment investment cost is high

Method used

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  • Device used for forming SiN film on substrate

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Embodiment Construction

[0020] Such as figure 1 As shown, a device for forming a SiN thin film on a substrate includes a vacuum reaction chamber 1, a substrate holder, a substrate temperature measurement module 2, a gas introduction module 3, a heating catalyst 4, a Infrared thermal measuring instrument 5, and an exhaust system.

[0021] The substrate frame is arranged in the vacuum reaction chamber 1 for placing the substrate 10 .

[0022] The substrate temperature measurement module 2 is arranged on the substrate frame to measure the temperature of the substrate 10, which is a thermocouple, and can send the detected thermal electromotive force signal representing the substrate temperature to an external electrical instrument, The electrical instrument displays the temperature value of the substrate according to the thermal electromotive force signal. In this embodiment, the temperature of the substrate 10 is between 230°C and 380°C, preferably 300°C.

[0023] The gas introduction module 3, which...

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Abstract

The invention relates to a device used for forming an SiN film on a substrate, which is characterized by comprising a vacuum reaction cavity, a substrate frame, a substrate temperature measurement module, a gas import module, a heating catalytic device and a thermal infrared temperature measuring instrument, wherein the substrate frame is arranged in the vacuum reaction cavity and is used for placing the substrate; the substrate temperature measurement module is arranged on the substrate frame and is used for measuring the temperature of the substrate; the gas import module is connected with the vacuum reaction cavity, is opposite to the substrate frame and is used for transmitting gases including N2H4, N2 and SiH4 into the vacuum reaction cavity; the heating catalytic device is arranged in the vacuum reaction cavity, is positioned between the gas import module and the substrate frame, and is used for heating the gases which are transmitted into the vacuum reaction cavity and accelerating the reaction among the gases so as to form the SiN film; and the thermal infrared temperature measuring instrument is used for detecting the temperature of the heating catalytic device. The device used for forming the SiN film on the substrate is simple in structure and low in input cost, and greatly reduces the high cost of equipment purchased by an enterprise.

Description

Technical field: [0001] The present invention relates to a device for forming SiN film on a substrate. Background technique: [0002] The traditional device for forming SiN thin film on the substrate is mainly magnetron sputtering coating equipment, the defect is that the equipment investment cost is high. Therefore, it is necessary to provide a device for forming a SiN thin film on a substrate with a simple structure and low investment cost to meet the demand. Invention content: [0003] The object of the present invention is to provide a device for forming a SiN thin film on a substrate, which has a simple structure and low input cost. [0004] A device for forming a SiN thin film on a substrate, characterized in that: comprising [0005] a vacuum reaction chamber; [0006] a substrate rack, set in the vacuum reaction chamber, for placing the substrate; [0007] A substrate temperature measurement module, set on the substrate frame, used to measure the temperature of...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/44
Inventor 粟婷屈生双屈宸远
Owner ZHONGSHAN CHUANGKE RES TECH SERVICE
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