Aluminum-gate semiconductor device and manufacturing method thereof

Abstract

An embodiment of the invention relates to the technical field of semiconductors, in particular to an aluminum-gate semiconductor device and a manufacturing method thereof. The manufacturing method includes injecting boron impurity to a substrate to form a boron-P well region with junction depth meeting preset junction depth requirements of aluminum-gate semiconductor devices; growing a thin-film oxide layer on the upper surface of the P well region; growing polycrystalline silicon on the thin-film oxide layer and doping according to the impurity concentration meeting preset resistance requirements so as to form a polycrystalline silicon layer; growing a metal layer on the polycrystalline silicon; and covering an insulation layer on the metal layer. The polycrystalline silicon resistance replaces the existing P well type resistance, so that P well concentration meets requirements of functional parameters of the aluminum-gate semiconductor devices, and the well polycrystalline silicon resistance meets resistance requirements of the aluminum-gate semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an aluminum gate semiconductor device and a manufacturing method thereof. Background technique [0002] At present, the widely used aluminum gate complementary metal oxide semiconductor devices all use P-type well resistors to adjust important parameters such as frequency. In a traditional semiconductor chip manufacturing process, a P-type well is formed by one well implantation, and the resistance of the P-type well is the resistance of the P-type well. In order to meet the resistance requirement of the P-type well resistor, when forming the P-type well, the impurity concentration of the P-type well needs to reach a certain value. [0003] At the same time, the concentration of the P-type well directly affects the functional parameters of the N-type metal oxide semiconductor device or the N-type depletion. For example, when the impurity concentration of the P-type well i...

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Problems solved by technology

[0003] At the same time, the concentration of the P-type well directly affects the functional parameters of the N-type metal oxide semiconductor device or the N-type depletion. For example, when the impurity concentration of the P-type well is too high, the resistance of the P-well becomes smaller, and the turn-on voltage Vtn becomes larger. , thus affecting the turn-on of the circuit

[0004] However, the impurity concentration of the P-type well is difficult to meet the requirements of resistance value and semiconductor device parameters at the same time

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