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Solid-state imaging device, manufacturing method thereof, and electronic device

A technology of solid-state imaging devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as difficulty in improving sensitivity

Active Publication Date: 2016-12-21
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the circuit and wiring block the incident light, so there are cases where it is difficult to improve the sensitivity

Method used

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  • Solid-state imaging device, manufacturing method thereof, and electronic device
  • Solid-state imaging device, manufacturing method thereof, and electronic device
  • Solid-state imaging device, manufacturing method thereof, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0077] Structure of solid-state imaging device

[0078] Example of placing insulating layers and buried wiring in a stepped structure

[0079] figure 2 is a sectional view of main parts showing the configuration of the solid-state imaging device 1-1 of the first embodiment, and is figure 1 A cross-sectional view near the boundary between the pixel area 4 and the peripheral area 7 in . The configuration of the solid-state imaging device 1 - 1 of the first embodiment will be described below based on a sectional view of main parts here.

[0080] figure 2 The solid-state imaging device 1 - 1 of the first embodiment shown is a solid-state imaging device of a three-dimensional structure in which the sensor substrate 2 and the circuit substrate 9 are laminated as described above. On the front side of the sensor substrate 2 , that is, on the surface facing the circuit substrate 9 , a wiring layer 2 a and a protective film 2 b covering the wiring layer 2 a are provided. On the o...

no. 2 example

[0150] Structure of solid-state imaging device

[0151] Example in which the insulating layer is provided with a stepped structure and the insulating pattern is covered with an insulating film

[0152] Figure 7 A sectional view of main parts showing the structure of the solid-state imaging device 1-2 of the second embodiment, and is figure 1 A cross-sectional view around the boundary between the pixel area 4 and the peripheral area 7 in . The structure of the solid-state imaging device 1-2 of the second embodiment will be described below based on this main part sectional view.

[0153] Figure 7 The solid-state imaging device 1-2 of the second embodiment shown with reference to figure 2 The solid-state imaging device of the first embodiment described above is different in that the insulating layer 41 of the stepped structure has a layer structure, and the other structures are similar to those of the first embodiment.

[0154] That is, the insulating layer 41 has an insu...

no. 3 example

[0182] Structure of solid-state imaging device

[0183] Example of Embedded Wiring Provided with Stepped Insulation Layer and Sensor Substrate Subjected to Etching Back

[0184] Figure 11 is a main part sectional view of the structure of the solid-state imaging device 1-3 of the third embodiment, and is figure 1 A cross-sectional view around the boundary between the pixel area 4 and the peripheral area 7 in . The structure of the solid-state imaging device 1-3 according to the third embodiment will be described below based on this main part sectional view.

[0185] exist Figure 11 The solid-state imaging device 1-3 of the third embodiment shown in the figure 2 The solid-state imaging device of the first embodiment described above is different in the layer structure of the insulating layer 43 having a stepped structure and the embedded portion of the wiring 8, while the other structures are similar to those of the first embodiment.

[0186]That is, the insulating layer ...

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PUM

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Abstract

The present invention relates to a solid-state imaging device and a solid-state imaging device, their manufacturing method, and electronic equipment. The solid-state imaging device has: a sensor substrate having a pixel region on which photoelectric converters are arranged; and a drive circuit provided on a front surface of the sensor substrate opposite to a light-receiving surface of the photoelectric converter. on the side; an insulating layer disposed on the light receiving surface and having a stepped structure in which the film thickness of the pixel region is thinner than that of a peripheral region disposed outside the pixel region; a wire provided in the peripheral region on the light receiving surface side; and an on-chip lens provided at a position corresponding to the photoelectric converter on the insulating layer. According to the present invention, the light-receiving performance of the photoelectric converter can be improved, and the yield and device reliability can be improved, thereby improving image quality.

Description

[0001] Cross References to Related Applications [0002] This application contains the Japanese prior patent application JP 2011-157977 submitted to the Japan Patent Office on July 19, 2011, the Japanese prior patent application JP2011-162228 submitted to the Japan Patent Office on July 25, 2011, and the Japanese prior patent application JP 2011-162228 submitted to the Japan Patent Office on September 9, 2011 The subject matter is related to that disclosed in Japanese Priority Patent Application JP2011-196785 filed in Japan Patent Office in Japan, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device, a method of manufacturing a solid-state imaging device, a method of manufacturing a semiconductor device, a semiconductor device, and electronic equipment. Background technique [0004] Electronic equipment such as digital video cameras, digital still cameras, etc. include semico...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N5/369H04N5/225
CPCH01L23/481H01L27/14623H01L27/14627H01L27/14634H01L27/14636H01L27/1464H01L27/14685H01L27/1469H01L27/14621H01L2924/0002H01L2924/00H01L2224/08145H01L2224/80896H01L2224/92H01L27/14645H01L21/76898H01L2224/80001H01L2224/82
Inventor 三桥生枝秋山健太郎菊地晃司
Owner SONY CORP