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semiconductor integrated circuit

An integrated circuit and semiconductor technology, applied in the field of semiconductor integrated circuits, can solve the problems of large reverse voltage fluctuations of bipolar transistors 21, inability to set the clamping voltage to a correct value, and deterioration of the yield of semiconductor integrated circuits.

Active Publication Date: 2017-03-01
MITSUMI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the bipolar transistor 21 formed in the process of forming the MOS transistor, the fluctuation of the reverse voltage of the bipolar transistor 21 is large, and the clamp voltage cannot be set to the correct value (6V), resulting in a finished product of the semiconductor integrated circuit. rate variation

Method used

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Experimental program
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Embodiment Construction

[0062] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0063]

[0064] figure 1 It is a structural diagram showing an embodiment of the monitoring alarm system. The monitoring alarm system has: a main unit 30, a power signal line 31, and a plurality of slave units 32-1 to 32-n. The main unit 30 supplies power VDD1 to the plurality of sub units 32-1 to 32-n connected to the power signal line 31, respectively. The power supply VDD1 has a normal voltage of 24V (maximum voltage of 30V). In addition, the master unit 30 also transmits control data to the plurality of slave units 32-1 to 32-n via the power signal line 31 in a serial communication manner.

[0065] Each of the child machines 32-1 to 32-n is supplied with power from the parent machine 30 to operate, and uses a built-in monitoring sensor to collect data of the installation environment, that is, to monitor. Then, each slave unit compares the output data of the monitoring sensor ...

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Abstract

The purpose of the invention is to provide a semiconductor integrated circuit capable of setting a clamping voltage as a correct value. The semiconductor integrated circuit comprises a constant current portion (60) which is supplied with power and which generates constant current, the power being a voltage, a clamping portion (71) which is supplied with constant current generated by the constant current portion (60), which generates a second voltage lower than the first voltage, and which clamps the power of the first voltage at the second voltage, and a reference portion (71) which is supplied with power which is clamped by the clamping portion and which generates a reference voltage. The clamping portion (71) connects a grid electrode with a drain electrode and is a multistage MOS transistor (M11-1~M11-n) which is connected in a vertical manner.

Description

Technical field [0001] The present invention relates to a semiconductor integrated circuit having a reference voltage circuit. Background technique [0002] Among semiconductor integrated circuits, there are semiconductor integrated circuits in which high withstand voltage circuits and low withstand voltage circuits coexist. Such a semiconductor integrated circuit is provided with a clamp circuit for preventing application of a high voltage to a low withstand voltage circuit. [0003] Image 6 This is an example of a circuit configuration diagram of a semiconductor integrated circuit proposed by the applicant in Patent Document 1. Image 6 Among them, the semiconductor integrated circuit has a power supply terminal 11, a resistor 12, a clamp circuit 13, and an internal circuit 14 with a low withstand voltage. The power supply terminal 11 is a terminal to which a high voltage VDD1 (for example, a maximum of 30V) is applied, and is connected to the clamp circuit 13 and the internal ci...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/003
CPCH01L2924/0002
Inventor 桑原浩一山口公一
Owner MITSUMI ELECTRIC CO LTD