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Method for fabricating semiconductor transistor structure

A semiconductor and transistor technology, applied in the field of manufacturing field effect transistor structures with buried insulating field plates, can solve problems such as power loss and reduction of gate-source capacitance efficiency and the like

Active Publication Date: 2016-08-10
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The associated turn-on again results in power loss and reduces the efficiency of the gate-source capacitance

Method used

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  • Method for fabricating semiconductor transistor structure
  • Method for fabricating semiconductor transistor structure
  • Method for fabricating semiconductor transistor structure

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Embodiment Construction

[0012] In the following detailed description, reference is made to any accompanying drawings that form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. In view of this, terms from directional terms such as "upper side", "lower side", "front side", "back side", "front side", "rear side", etc. - refer to the orientation to use. Since components of an embodiment may be positioned in a range of different orientations, these directional terms are for illustration purposes and are in no way limiting. It should be understood that other embodiments may be employed and structural or logical changes may be made without departing from the protection scope of the present invention. Accordingly, the following detailed description should not be read in a limiting sense.

[0013] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the drawings. Each examp...

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Abstract

The method involves forming a vertical trench that extends from a horizontal main surface (15) into a semiconductor body (40). A dielectric layer is formed in the vertical groove. A conductive region is formed on the dielectric layer in the vertical trench such that the conductive region is retracted from the horizontal main surface. The vertical trench is filled with another dielectric layer. The dielectric layers are removed from an upper portion of the vertical trench to expose the semiconductor body at a side wall of the vertical trench, where the conductive region is remains covered.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor transistor structure, in particular a method for manufacturing a field effect transistor structure with buried insulating field plates. Background technique [0002] Many functions of modern devices in motor vehicles, consumer goods and industrial applications - such as electrical energy conversion, the control of electric motors or motors and the modulation or amplification of signals, for example in HiFi audio amplification circuits - are based on semiconductor transistors, especially field effect transistors (FET) such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor). In these components, the control electrode of the transistor is a gate electrode which is insulated from the semiconductor body and which is also referred to below as gate electrode. [0003] In addition to the capacitance between the transistor's gate electrod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/7813H01L29/0653H01L29/407H01L29/42368H01L29/66348H01L29/66727H01L29/66734H01L29/7397H01L29/7811
Inventor O.布兰克M.胡茨勒
Owner INFINEON TECH AUSTRIA AG