de-embedding method

Abstract

The invention discloses a de-embedding method. A scattering parameter under a testing signal of a plurality of different frequencies of a vector network analysis meter surveying testing structure, an open circuit de-embedding structure and a short circuit de-embedding structure is used. A plurality of scattering parameters of the open circuit de-embedding structure and a plurality of scattering parameters of the short circuit de-embedding structure are stored at the same time. The scattering parameters under the specific frequency of the testing signal frequency of the open circuit de-embedding structure are not needed to be surveyed and the scattering parameters under the specific frequency of the testing signal frequency of the short circuit de-embedding structure are not needed to be surveyed when de-embedding scattering parameters under the specific frequency of the testing signal frequency of a to-be tested component obtained follow-up. The de-embedding method is simple and occupation of the vector network analysis meter is reduced. The specific frequency is needed to be changed many times when voltage characteristics of the to-be tested component is analyzed comprehensively, thus effect of a technical scheme is prominent.

Description

technical field [0001] The invention relates to the field of testing of semiconductor elements, in particular to a de-embedding method. Background technique [0002] An integrated circuit formed on a semiconductor substrate includes a plurality of active and passive components, such as resistors, inductors, capacitors, transistors, amplifiers, and the like. The above-mentioned components are manufactured according to design specifications, and the design specifications define the ideal electrical characteristics of the above-mentioned components. In general, it is desirable to confirm whether each component meets its specific design specifications, however, individual components cannot be easily tested after the components are integrated into an integrated circuit. Thus, standalone copies of individual components in an integrated circuit are fabricated on a wafer, and then the electrical characteristics of the standalone copies are measured. The independently replicated co...

AI Technical Summary

Problems solved by technology

[0006] However, in the above de-embedding method, after using the vector network analyzer to measure the scattering parameters of the test structure, the open-circuit de-embedding structure and the short-circuit de-embedding structure under multiple test signals of different frequencies, the vector network analyzer is used to measure the open-circuit de-embedding again. The scattering parameters of the embedding structure and the short-circuit de-embedding structure under the test signals of three specific frequencies make the de-embedding method too complicated and occupy too much vector network analyzer

Images