Large-power 1064 nm near-infrared laser based on wattle structure

A slab structure, high-power technology, applied in the direction of lasers, laser components, phonon exciters, etc., can solve the problems of short absorption length, complex structure design, and limited development, so as to increase power density, improve beam quality, Eliminates the effect of thermal focus

Active Publication Date: 2013-04-24
苏州镭创光电技术有限公司
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AI-Extracted Technical Summary

Problems solved by technology

However, this scheme has disadvantages such as complex structural design, short absorption length, and low pumping efficiency, which limit its further development.
Most of the existing 1064nm lasers use rod-shaped cryst...
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Method used

In addition, the solid near-infrared laser device based on slat structure of the present invention, compared to the near-infrared laser device based on rod-shaped working medium, by designing reasonable " M " font light path, and suitably selecting the radius of curvature of cylindrical mirror, First-order thermal focusing, stress birefringence, and depolarization effects can be mitigated or even eliminated, resulting in better beam quality and higher output power with a simple slab laser structure.
[0026] More preferably, both end faces of the laser crystal 4 are coated with an...
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Abstract

The invention discloses a large-power 1064 nm near-infrared laser based on a wattle structure. The large-power 1064 nm near-infrared laser based on the wattle structure is characterized in that the large-power 1064 nm near-infrared laser based on the wattle structure comprises a laser crystal, optical lenses placed on both sides of the laser crystal and a semiconductor laser pumping module, a laser resonant cavity forming pump lights into 1064 nm lasers with high beam quality and a modulating component modulating the lasers, wherein the laser crystal is a wafer with the wattle structure, an optical direction of the pump lights is in the wafer, a M-shaped light path is formed by the lasers in the laser. The large-power 1064 nm near-infrared laser based on the wattle structure has the advantages that the first-order hot focus, the stress birefringence and the depolarization effect can be lightened even eliminated through the reasonable M-shaped light path designed and the curvature radius of the cylindrical mirror chosen appropriately, thus the simple wattle laser structure is used so as to obtain better light bean quality and higher output power. A diaphragm is arranged inside the laser resonant cavity and can further improve the light beam quality.

Application Domain

Laser details

Technology Topic

Optical pathFar-infrared laser +9

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  • Large-power 1064 nm near-infrared laser based on wattle structure

Examples

  • Experimental program(1)

Example Embodiment

[0018] The following describes the present invention in detail with reference to the drawings and specific embodiments.
[0019] Reference figure 1 , The high-power 1064nm near-infrared laser based on the slat structure of the present invention includes: a laser crystal 4, semiconductor laser pumping modules 1, 7 separated on both sides of the laser crystal 4, arranged on the laser crystal 4 and the semiconductor laser pumping modules 1, 7 Lenses 2, 6, lenses 2, and 6 between the lenses form a lens group, and the pump light emitted by the semiconductor laser pump modules 1, 7 forms a high beam quality 1064nm laser laser resonator, which also includes: Modulation device 9 for modulating the beam quality of 1064nm laser.
[0020] The following describes the laser cavity in detail.
[0021] Reference figure 1 The laser resonant cavity is composed of cavity mirrors, specifically composed of cylindrical mirrors 3, 5 and plane mirrors 8, 10, 11, 12, and 14. The cylindrical mirrors 3 and 5 are arranged on one side of the laser crystal 4, and the flat mirrors 8, 10, 11, 12 and 14 are arranged on the other side of the laser crystal 4. Among them, the plane mirrors 8, 14 are vertically arranged at the two ends of the laser cavity, the plane mirrors 10, 12 are respectively inclined at 45° and 135° and arranged in the middle of the laser cavity, and the plane mirror 11 is arranged horizontally. The laser is formed in the laser "M" shaped light path; the adjustment device 9 is arranged between the plane mirrors 8, 10.
[0022] In the present invention, the cylindrical mirrors 3 and 5 are arranged symmetrically, and the symmetry axis coincides with the symmetry axis of the semiconductor laser pump modules 1 and 7.
[0023] As a preferred solution, the cylindrical mirrors 3, 5 and the flat mirrors 8, 10, 11, and 12 are all coated with a 1064nm laser high-reflection film; the flat mirror 14 is coated with a 1064nm laser high-transmission film and a pump light high-reflection film.
[0024] In the present invention, the laser crystal 4 is a slat-shaped sheet, which is wrapped in indium foil and placed in a heat sink crystal holder, and the direction of the pump light passing through the sheet is within the sheet. In addition, the "C" axis of the laser crystal 4 is placed vertically, and the "C" axis can also be rotated 90°, that is, placed horizontally.
[0025] As a preferred solution, the laser crystal 4 is Nd:YVO4 crystal or Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
[0026] More preferably, both end faces of the laser crystal 4 are coated with antireflection coatings for antireflection of the pump light and 1064nm laser to increase the absorption of the pump light.
[0027] As a preferred solution, the near-infrared laser of the present invention further includes a heat sink (not shown). The heat sink is in contact with the upper and lower surfaces of the flake-shaped laser crystal 4 to ensure effective heat conduction.
[0028] As a preferred solution, the semiconductor laser pump modules 1 and 7 are all semiconductor laser diodes with a center wavelength of 808nm and a maximum output power of 30W. Other center wavelengths can also be selected according to the selected laser crystal 4, such as 880nm semiconductor laser pump module.
[0029] As a preferred solution, the modulation device 9 is an acousto-optic modulation device, an electro-optic modulation device or an absorption passive Q-switch.
[0030] More preferably, both end surfaces of the modulation device 9 are coated with 1064nm antireflection film.
[0031] As a preferred solution, the end surfaces of the lenses 2 and 6 are plated with a high-transmitting film for pump light.
[0032] In the present invention, the pump light emitted by the semiconductor laser pump modules 1, 7 is condensed into a one-dimensional parallel light with a rectangular cross-section through the lens group. As a preferred solution, the upper and lower widths of the one-dimensional parallel light are laser crystals. 4 is half of the thickness, and the length is less than the length of the laser crystal 4.
[0033] In the present invention, the semiconductor laser pump modules 1, 7 located on both sides of the laser crystal 4 pump the laser crystal 4 in the middle at the same time, and can also be any one of the two semiconductor laser pump modules 1, 7 to the laser crystal 4 Perform separate pumping.
[0034] As a preferred solution, the near-infrared laser of the present invention further includes an aperture 13 arranged in the laser resonant cavity to further improve the beam quality.
[0035] Reference figure 1 The working principle of the near-infrared laser of the present invention is: the linear pump light output by the semiconductor laser pump modules 1, 7 is condensed to the end surface of the laser crystal 4 by the lenses 2, 6, and the laser crystal 4 absorbs the pump light energy to produce Stimulated emission, the emitted light forms a high-beam fundamental frequency laser under the mode selection of the laser cavity (composed of cylindrical mirrors 3, 5 and plane mirrors 8, 10, 11, 12, and 14). Under the modulation action of, a modulated laser with high peak power is obtained.
[0036] Using the near-infrared laser of the present invention, without changing the internal structure of the laser, within the laser crystal damage threshold range, the pump power of the laser diode can be increased, and the power density of the fundamental frequency laser in the cavity can be further increased, thereby obtaining Higher power mid-infrared laser output.
[0037] In addition, the solid-state near-infrared laser based on the slat structure of the present invention, compared with the near-infrared laser based on the rod-shaped working medium, can reduce even the damage by designing a reasonable "M"-shaped optical path and appropriately selecting the radius of curvature of the cylindrical mirror. Eliminate first-order thermal focusing, stress birefringence and depolarization effects, so as to use a simple slab laser structure to obtain better beam quality and higher output power.
[0038] It should be noted that the above-mentioned embodiments do not limit the present invention in any form, and all technical solutions obtained by equivalent substitutions or equivalent transformations fall within the protection scope of the present invention.

PUM

PropertyMeasurementUnit
Center wavelength808.0 ~ 880.0nm

Description & Claims & Application Information

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