Wafer cutting method

Abstract

A wafer cutting method includes that a first wafer and a second wafer are combined to form a combined wafer, half cutting action is performed on the first surface of the combined wafer, a tin ball is arranged on the second surface of the combined wafer, and cutting action is performed on the second surface of the combined wafer. Adhesion between a cutting adhesive film and a wafer combining structure in a particle cutting step cannot be influenced by a protruding tin ball structure through a half cutting process and changing of order of a tin ball formation steps, and yield and precision of a subsequent cutting process are improved further.

Description

【Technical field】 [0001] The present invention relates generally to a wafer dicing method, and more particularly to a dicing method for bonding wafer structures at the wafer level. 【Background technique】 [0002] Epitaxy and coating processes are widely used in the manufacturing process of semiconductor components and optoelectronic components to form various layer structures. Generally speaking, to grow another different material on one material, the degree of matching between the atomic lattices of the two must be considered. When a stress field is generated, most of the defects or dislocations will be concentrated at this type of interface, which will lead to problems such as threading dislocation in the subsequent coating film or epitaxial structure, which will seriously affect the performance of the device. In recent years, in order to solve the above-mentioned problems such as lattice size mismatch and tunneling dislocation during coating epitaxy. Wafer-to-wafer bond...

AI Technical Summary

Problems solved by technology

Since these solder balls 130 will affect the adhesion between the dicing adhesive film 140 and the bonded wafer 100, it is easy to cause the bonded wafer 100 to be unable to be firmly fixed during the dicing process, which will also affect the accuracy of dicing.

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