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Method for obtaining a plurality of W-Ti-N films with different W/Ti ratios by one time sputtering

A secondary sputtering and proportional technology, which is applied in the field of W-Ti-N thin films, can solve the problems of insignificant effects and limited changes in the comprehensive performance of W-Ti-N thin films, and achieves low cost, easy control of parameters, and high process efficiency. simple effect

Inactive Publication Date: 2013-05-08
无锡润鹏复合新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain W-Ti-N films with different W / Ti ratios, composite targets or mosaic targets are usually used at present, but the chemical composition of W-Ti-N films prepared by these methods is similar to that of the targets and W / Ti The change of the ratio is very limited, and the effect on improving the comprehensive performance of the W-Ti-N film is not obvious

Method used

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  • Method for obtaining a plurality of W-Ti-N films with different W/Ti ratios by one time sputtering
  • Method for obtaining a plurality of W-Ti-N films with different W/Ti ratios by one time sputtering
  • Method for obtaining a plurality of W-Ti-N films with different W/Ti ratios by one time sputtering

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Embodiment 1

[0020] (1) The sputtering equipment adopts PSII type double discharge controlled microwave ECR plasma injection device in all directions, and the sputtering targets are pure metal W target (purity ≥99.99%) and pure metal Ti target (purity ≥99.99%). The two targets are placed at 90° to each other and at 45° to the sputtering table. The distance between the center of the double target and the sample table is 83mm. The base material is 40Cr stainless steel (10mm×10mm×3mm). and the right order is placed in turn;

[0021] (2) The stainless steel sample is cleaned by reverse sputtering, the power is 100W, and the cleaning is 10min;

[0022] (3) The stainless steel sample is sent into the main sputtering chamber, and both the target and the sample are cooled by circulating water;

[0023] (4) Add reactive gas N into the main sputtering chamber 2 (purity ≥99.99%) and sputtering gas Ar (purity ≥99.99%), the ratio of the two is 1:3, and the initial vacuum degree is ≥5×10 -4 Pa, co-sp...

Embodiment 2

[0027] (1) The sputtering equipment adopts PSII type double discharge controlled microwave ECR plasma injection device in all directions, and the sputtering targets are pure metal W target (purity ≥99.99%) and pure metal Ti target (purity ≥99.99%). The two targets are placed at 90° to each other and at 45° to the sputtering table. The distance between the center of the double target and the sample table is 83mm. The base material is 40Cr stainless steel (10mm×10mm×3mm). and the right order is placed in turn;

[0028] (2) The stainless steel sample is cleaned by reverse sputtering, the power is 100W, and the cleaning is 10min;

[0029] (3) The stainless steel sample is sent into the main sputtering chamber, and both the target and the sample are cooled by circulating water;

[0030] (4) Add reactive gas N into the main sputtering chamber 2 (purity ≥99.99%) and sputtering gas Ar (purity ≥99.99%), the ratio of the two is 1:3, and the initial vacuum degree is ≥5×10 -4 Pa, co-sp...

Embodiment 3

[0033] (1) The sputtering equipment adopts P SII type double discharge controlled microwave ECR plasma injection device in all directions, and the sputtering targets are pure metal W target (purity ≥99.99%) and pure metal Ti target (purity ≥99.99%), The two are placed at 90° to each other and are placed at 45° between the sputtering stage. The distance between the center of the double target is 83mm from the sample stage. The order of left and right is placed in turn;

[0034] (2) The stainless steel sample is cleaned by reverse sputtering, the power is 100W, and the cleaning is 10min;

[0035] (3) The stainless steel sample is sent into the main sputtering chamber, and both the target and the sample are cooled by circulating water;

[0036] (4) Add reactive gas N into the main sputtering chamber 2 (purity ≥ 99.99%) and sputtering gas Ar (purity ≥ 99.99%), the ratio of the two is 1:4, the initial vacuum degree ≥ 5 × 10 -4 Pa, co-sputtering with two targets, power is 200W, s...

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Abstract

The invention discloses a method for obtaining a plurality of W-Ti-N films with different W / Ti ratios by one time sputtering. According to the method, 40 Cr stainless steel is selected as a substrate, W and Ti with a purity higher than 99.99% are selected as sputtering target materials, and the plurality of the W-Ti-N films with different W / Ti ratios are obtained in one time sputtering process by changing positions between the substrate and the target materials (the angle between the sputtering bench and each of the two targets is 45 degrees). The method has easily available raw materials, low cost, simple process and easily controllable parameters, and the obtained W-Ti-N films have a plurality of microstructures, has excellent comprehensive properties in the aspects of wear resistance, corrosion resistance, high-temperature oxidation resistance and the like, can be widely applied in the fields of cutting tools, circuits and frictions and is suitable for large-scale industrialized production.

Description

technical field [0001] The invention relates to a preparation method of a W-Ti-N thin film, in particular to a method for obtaining multiple W-Ti-N thin films with different W / Ti ratios by one sputtering. Background technique [0002] W-Ti-N films are widely used as protective coatings for various cutting tools and diffusion barrier layers for circuit boards due to their high hardness and good high-temperature oxidation corrosion resistance, which significantly improves the surface properties of the base material. Thus, the service life of the cutting tool and the circuit board is significantly prolonged, and the cost of industrial production is reduced. Studies have shown that the ratio of W / Ti in the W-Ti-N film has an important influence on the microstructure, morphology, high temperature oxidation resistance and various mechanical properties of the film, and the properties of films with different W / Ti ratios are also different. For example, the corrosion resistance of f...

Claims

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Application Information

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IPC IPC(8): C23C14/46C23C14/06
Inventor 李长生李学超唐华莫超超张烨
Owner 无锡润鹏复合新材料有限公司