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Method of manufacturing semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as reducing the reliability of semiconductor devices, achieve the effect of improving hot carrier injection effect and improving reliability

Inactive Publication Date: 2013-05-08
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The hot carrier injection effect will seriously reduce the reliability of semiconductor devices

Method used

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  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

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Embodiment Construction

[0024] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0025] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when a...

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Abstract

The invention discloses a method of manufacturing a semiconductor device. The method comprises the following steps: a) providing a semiconductor lining bottom which is provided with a polysilicon layer in a forming mode; b) conducting N-type grid pre-doping process to the polysilicon layer; c) etching the polysilicon layer to form an N-type polysilicon grid; d) conducting N-type shallow doping process to form an N-type shallow doping area in the semiconductor lining bottom on two sides of the polysilicon grid; and e) conducting N-type source / drain electrode doping process to form an N-type source electrode and an N-type drain electrode in the semiconductor lining bottom of the two sides of the polysilicon grid. At least one of the pre-doping process in the b) step, the N-type shallow doping process in the d) step and the N-type source / drain electrode doping process in the e) step is simultaneously doped with carbon and fluorine. The method of manufacturing the semiconductor device can effectively improve a hot carrier ejection effect and the reliability of the semiconductor device.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the increasing demand for high integration and high performance of VLSI, the critical dimensions of semiconductor devices are getting smaller and smaller. However, when the channel length is shortened to be comparable to the sum of the depletion layer widths of the source and drain, the perturbation caused by the channel edges (such as the source, drain, and insulating region edges) becomes more significant, The performance of semiconductor devices will deviate from the original long channel characteristics. For example, in short-channel conditions, the threshold voltage (i.e., the turn-on voltage of the gate) decreases as the drain voltage increases, which adversely affects the threshold voltage control and leakage characteristics of semiconductor devices. The above-mentioned influence...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28H01L21/265
Inventor 甘正浩冯军宏
Owner SEMICON MFG INT (SHANGHAI) CORP
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