Multipoint-gas-inlet multi-region adjusting device used for PECVD (Plasma Enhanced Chemical Vapor Deposition)
An air intake device and multi-point technology, applied in the field of microelectronics, can solve problems such as low equipment output rate, inconsistent SiN film thickness, unstable plasma field uniformity, etc., to improve production efficiency, improve processing accuracy, The effect of improving process reliability
Active Publication Date: 2015-05-13
SHENYANG SCI INSTR RES CENT CHINESE ACAD OF SCI
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Problems solved by technology
The substrate used by plate PECVD is usually small, and it is only used in the anti-reflection process of crystalline solar silicon wafers. During the coating process of plate PECVD, there is only one carrier plate with cells in the equipment in one reaction cycle. After completing the entire reaction After the cycle, the next coating can be carried out, and the output rate of the equipment is low
In addition, the state of the tip of the pyramid generated by the surface texture of the silicon wafer has an impact on the plasma discharge, and the current conductivity of the silicon wafer also affects the uniformity of the plasma field, resulting in a less stable uniformity of the plasma field , causing the thickness of the SiN film layer deposited on the battery sheet in the carrier to be inconsistent
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[0024] The present invention will be further described below in conjunction with the accompanying drawings.
[0025] Such as figure 1 As shown, the present invention includes an exhaust area body, a water inlet pipe 4, a water return pipe 8, a silane gas inlet 5 and an ammonia gas inlet 6, wherein the water inlet pipe 4, the water return pipe 8, the silane gas inlet 5 and the ammonia gas inlet The air ports 6 are all arranged on the exhaust area body.
[0026] The bottom of the exhaust area body is provided with a bottom air hole nozzle, and the air holes on the bottom air hole nozzle are arranged in the shape of "one". The bottom pore nozzle is connected with the ammonia gas inlet 6 through a pipeline. The end of the exhaust area body is provided with an end air hole nozzle, and the air holes on the end air hole nozzle are arranged in the shape of "one". The end pore nozzle is connected with the silane air inlet 5 through a pipeline, and the silane air inlet 5 is arranged ...
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The invention belongs to the field of microelectronic technique, and particularly relates to a multipoint-gas-inlet multi-region adjusting device used for PECVD (Plasma Enhanced Chemical Vapor Deposition) and capable of improving large-area film coating evenness. The multipoint-air-inlet multi-region adjusting device comprises a gas exhaust region body, and a water inlet pipe, a water return pipe, a silane gas inlet and an ammonia gas inlet which are all distributed on the gas exhaust region body. A plurality of battery cells can be handled through the PECVD with the multipoint-gas-inlet multi-region adjusting device, and the device is capable of improving the thickness evenness of a SiN film layer, thereby having higher productivity and improving the production efficiency of PECVD equipment.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a multi-point air intake and multi-zone adjustable device for PECVD that can improve the uniformity of large-area coating. Background technique [0002] With the rapid development of economic construction, microelectronics technology has developed rapidly, and the development and use of PECVD plasma processing equipment has become increasingly widespread. [0003] PECVD is the plasma enhanced chemical vapor deposition method. During chemical vapor deposition, in order to make the chemical reaction proceed at a lower temperature, the activity of the plasma can be used to promote the reaction. This chemical vapor deposition method is called plasma Volume-enhanced chemical vapor deposition method, the equipment for implementing this processing method is PECVD equipment. [0004] Thin film deposition systems used in the solar field are mainly large-scale flat-pl...
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IPC IPC(8): C23C16/455C23C16/50
Inventor 赵科新赵崇凌李士军张健张冬洪克超徐宝利钟福强陆涛许新王刚刘兴郭玉飞王学敏李松
Owner SHENYANG SCI INSTR RES CENT CHINESE ACAD OF SCI