Quartz spargers for UV nanocuring chambers

Abstract

Embodiments of the invention generally provide apparatus and methods for controlling gas flow distribution within a processing chamber. In one embodiment, a processing tool includes: an ultraviolet treatment chamber defining a processing region; a substrate support; a window disposed between a UV radiation source and the substrate support; and a transparent shower, The transparent shower is disposed in the processing area between the window and the substrate support and the transparent shower has one or more transparent shower channels between the upper processing area and the lower processing area. The processing tool also includes a gas distribution ring having one or more gas distribution ring channels between a groove in the gas distribution ring and the upper processing region; and a gas outlet ring disposed on the Below the gas distribution ring, the gas outlet ring has one or more gas outlet channels between the gas outlet ring inner groove in the gas outlet ring and the lower processing region.

Description

technical field [0001] Embodiments of the invention relate to processing tools for forming and processing thin films on substrates with light such as ultraviolet (UV) light. In particular, embodiments of the invention relate to controlling gas flow distribution within a processing chamber. Background technique [0002] Materials with low dielectric constant (low-k), such as silicon oxide (SiO x ), silicon carbide (SiC x ) and carbon-doped silicon oxide (SiOC x ), both find extremely wide use in semiconductor device fabrication. Using low-k materials as the intermetal and / or interlayer dielectric between conductive interconnects will reduce signal propagation delays due to capacitive effects. The lower the dielectric constant of the dielectric layer, the lower the capacitance of the dielectric and the lower the RC delay of the integrated circuit (IC). [0003] Low-k dielectric materials are generally defined as those materials with a dielectric constant k lower than that...

AI Technical Summary

Problems solved by technology

Therefore, removal of porogen residues necessarily results in increased cleaning time and a corresponding decrease in yield

Images