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Vapor phase epitaxy device

A technology of vapor phase epitaxy and heating equipment, which is applied in the direction of chemically reactive gas, crystal growth, single crystal growth, etc., to achieve the effect of maintaining stable temperature uniformity and improving uniformity

Active Publication Date: 2013-06-05
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] As the size of the wafer continues to increase, the uniformity control of the epitaxial layer is facing great challenges when using the existing vapor phase epitaxy equipment

Method used

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Experimental program
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Embodiment Construction

[0037] In the process of forming the epitaxial layer using the existing vapor phase epitaxy device, the inventor found that the heating device is located below the substrate, and it is difficult to adjust the uniformity of the temperature in the chamber and the temperature of the substrate to be processed. When the source gas reacts to form the epitaxial layer, the chamber The uniformity of the temperature in the chamber and the temperature of the substrate to be processed is not good, which affects the uniformity of the epitaxial layer formed on the substrate to be processed.

[0038] refer to figure 1 , the inventor further researched and found that the gas inlet 106 and the exhaust outlet 105 of the existing vapor phase epitaxy device are located at the lower end of the side wall 102 of the reaction chamber 10, and the source gas is passed into the reaction chamber 10 parallel to the direction of the substrate, which is easy to produce Thermal convection vortex, the flow ve...

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Abstract

A vapor phase epitaxy device comprises a bottom plate, an upper cover plate, side walls located between the bottom plate and the upper cover plate and a substrate on the bottom plate. The bottom plate, the upper cover plate, the side walls and the substrate constitute a reaction cavity. The vapor phase epitaxy device further comprises at least four air discharge ports distributed at lower ends of the side walls at equal included angles, and a heating device located on the upper cover plate and opposite to the substrate, wherein the at least four air discharge ports are used for discharging air in the reaction cavity, and a plurality of heating lamp tubes are distributed on the heating device. The vapor phase epitaxy device improves uniformity of an epitaxy layer.

Description

technical field [0001] The invention relates to the technical field of chemical vapor phase epitaxy, in particular to a vapor phase epitaxy device. Background technique [0002] The epitaxial process has been widely used in the semiconductor manufacturing process. The epitaxially grown single crystal layer can be different from the substrate in terms of conductivity type, resistivity, etc., and can also grow multilayer single crystals with different thicknesses and different requirements, thereby greatly improving device design flexibility and device performance. There are many ways to grow the existing epitaxial layer, but the most widely used is the vapor phase epitaxy process. [0003] The vapor phase epitaxy process is a process technology in which the reacting substances undergo a chemical reaction under gaseous conditions, and the solid substance is epitaxy on the surface of the heated solid substrate to obtain a solid material, which is realized through a vapor phase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/14C30B25/10
Inventor 涂火金
Owner SEMICON MFG INT (SHANGHAI) CORP
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