Silicon Nitride Removal Method in Manufacturing Process of Deep Trench Devices
A manufacturing process, deep trench technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of residual silicon nitride, inability to remove silicon nitride, and easy to interfere with the reaction of silicon nitride, and achieve improved performance. Product yield, the effect of solving residual problems
Active Publication Date: 2016-04-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0005] In the existing method for removing silicon nitride in the manufacturing process of deep trench devices, after the silicon wafer is immersed in the phosphoric acid tank, due to the viscosity of the chemical solution in the phosphoric acid tank, namely phosphoric acid, the air bubbles at the bottom of the deep trench cannot be completely removed. As a result, during the reaction process, bubbles can easily interfere with the reaction of silicon nitride and water, so that silicon nitride cannot be completely removed within a limited time, resulting in the formation of silicon nitride residues
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[0019] Such as image 3 As shown, it is a flow chart of the method of the embodiment of the present invention; a deep trench device such as a super junction device with a depth of about 35 microns is formed on the silicon wafer, and silicon nitride is formed in the deep trench region In particular, silicon nitride can also be formed on the surface of the silicon wafer outside the deep trench. In the embodiment of the present invention, silicon nitride is only formed on the surface of the silicon wafer outside the area of the deep trench; The method for removing silicon nitride in the manufacturing process of the deep trench device in the embodiment of the present invention adopts the following steps to remove the silicon nitride:
[0020] Step 1. Using the OF method, the silicon wafer formed with the silicon nitride is pretreated with deionized water. The time of the pretreatment is 650 seconds. Air bubbles are completely removed.
[0021] Step 2, after the pretreatment, i...
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Abstract
The invention discloses a method for removing silicon nitride in the manufacturing process of a deep trench device. The method includes steps of using deionized water to pre-treat a silicon chip in an over flow (OF) mode; and immersing the silicon chip into a phosphoric acid tank for the etching treatment so as to remove the silicon nitride completely. According to the method, before the silicon chip is immersed into the phosphoric acid tank, a pretreatment step is added, the deionized water in the pretreatment step can remove bubbles formed at the bottom of the deep trench completely, therefore interference of the bubbles to reaction of silicon nitride with water in the follow-up etching treatment can be avoided, finally the silicon nitride on the surface of the silicon chip can be removed completely, the residue problem of the silicon nitride can be solved, and the yield of products can be improved.
Description
technical field [0001] The invention relates to a method for removing silicon nitride, in particular to a method for removing silicon nitride in the manufacturing process of deep trench devices. Background technique [0002] Deep trench (DeepTrench) is used in many semiconductor devices, such as super junction (SuperJunction, SJ), dynamic random access memory (Dynamic Random Access Memory, DRAM), through silicon via (ThroughSiliconVia, TSV), and so on. During deep trench fabrication there will be removal of silicon nitride (Si 3 N 4 )A step of. [0003] In the deep trench device manufacturing process, silicon nitride will be formed on the surface of the silicon wafer outside the deep trench area, or the silicon nitride will be formed on the surface of the silicon wafer outside the deep trench area and on the surface of the deep trench. The silicon nitride to be removed, the removal method of silicon nitride in the existing deep trench device manufacturing process is to d...
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IPC IPC(8): H01L21/311
Inventor 陈东强黄志刚寿晓懂陈威梁海慧蔡亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP