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Power MOSFET and methods for forming the same

A power and semiconductor technology, applied in the field of power MOSFET and its formation, can solve the problems of low concentration of drift region and increased breakdown voltage of power MOSFET

Active Publication Date: 2013-06-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The concentration of the drift region is lower, so the breakdown voltage of the power MOSFET is increased

Method used

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  • Power MOSFET and methods for forming the same
  • Power MOSFET and methods for forming the same
  • Power MOSFET and methods for forming the same

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Embodiment Construction

[0050] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are for purposes of illustration, not limitation of the scope of the invention.

[0051] Power metal oxide semiconductor field effect transistors (MOSFETs) and methods of forming the same are provided according to various exemplary embodiments. The intermediate stages of forming this power MOSFET are described. Variations of power MOSFETs according to embodiments are discussed. Like reference numerals are used to refer to like elements throughout the various drawings and described implementations.

[0052] Such as figure 1 As shown, a semiconductor substrate 20 is provided. The semiconductor substrate 20 may include crystalline silicon or other semiconductor materials such as silico...

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Abstract

A power MOSFET includes a semiconductor region extending from a top surface of a semiconductor substrate into the semiconductor substrate, wherein the semiconductor region is of a first conductivity type. A gate dielectric and a gate electrode are disposed over the semiconductor region. A drift region of a second conductivity type opposite the first conductivity type extends from the top surface of the semiconductor substrate into the semiconductor substrate. A dielectric layer has a portion over and in contact with a top surface of the drift region. A conductive field plate is over the dielectric layer. A source region and a drain region are on opposite sides of the gate electrode. The drain region is in contact with the first drift region. A bottom metal layer is over the field plate. Methods for forming the power MOSFET is also disclosed.

Description

[0001] This application claims priority to provisionally filed U.S. Patent Application No. 61 / 565,177, filed November 30, 2011, entitled "Power MOSFETs and Methods for Forming the Same," which is incorporated herein by reference middle. technical field [0002] The present invention relates to the technical field of semiconductors, and more particularly, to a power MOSFET and a forming method thereof. Background technique [0003] A power metal oxide semiconductor field effect transistor (MOSFET) includes a drift region lightly doped with a p-type or n-type dopant. The concentration of the drift region is lower, so the breakdown voltage of the power MOSFET is increased. Conventional MOSFETs have shallow trench isolation (STI) regions that extend below each gate electrode. The drain-side drift region extends below the gate electrode and is adjacent to a channel region having a conductivity type opposite to that of the drain-side drift region. The channel region also extend...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0847H01L29/0634H01L29/78H01L29/402H01L29/456H01L29/06H01L29/1083H01L29/7835H01L29/66659H01L29/1045H01L21/26586
Inventor 郑志昌朱馥钰柳瑞兴段孝勤
Owner TAIWAN SEMICON MFG CO LTD