Device and method for uniform temperature of crucible when processing crystal material

Abstract

Disclosed are a temperature equilibrium device of a crucible when crystal materials are machined and a method of machining the crystal materials. The invention relates to a heating method of a crucible. Heating sleeves are arranged on the outer portion of the crucible (2) in an interval mode. An electrode A (5) and an electrode B (7) are respectively connected with two sides of the heating sleeves. A supporting body (6) is arranged on the lower portion of the crucible (2). A uniform temperature sleeve is arranged between the crucible (2) and the heating sleeves. The temperature sleeve revolves through a power mechanism. The revolving uniform temperature sleeve is arranged between the crucible and the heating sleeves, the crucible is heated by the uniform temperature sleeve, and thus a flat solid liquid interface can be maintained by liquid crystal in the crucible. The defect of the crystal vibration of the prior art is overcome in the drawing.

Description

【Technical field】 [0001] The invention relates to a crucible heating method, in particular to a crucible temperature equalizing device and method for processing crystal materials. 【Background technique】 [0002] Among crystal materials, the drawing of polysilicon scraps into polysilicon rods or the conversion of polysilicon into monocrystalline silicon requires the use of crucibles, which grow polycrystalline into single crystals by pulling or using the crucible drop method; this process is in a closed furnace Completed; taking polysilicon as an example, the conventional method is to set a support body at the bottom of the crucible, and the support body rotates to drive the crucible to rotate synchronously. Polysilicon is drawn into polysilicon rods; in this process, limited by the distance between the crucible and the heating mantle, the heating mantle heats the crucible, and the outer edge of the crucible is likely to form a part of the heat near the distance, and other pa...

AI Technical Summary

Problems solved by technology

[0002] Among crystal materials, the drawing of polysilicon scraps into polysilicon rods or the conversion of polysilicon into monocrystalline silicon requires the use of crucibles, which grow polycrystalline into single crystals by pulling or using the crucible drop method; this process is in a closed furnace Completed; taking polysilicon as an example, the conventional method is to set a support body at the bottom of the crucible, and the support body rotates to drive the crucible to rotate synchronously. Polysilicon is drawn into polysilicon rods; in this process, limited by the distance between the crucible and the heating mantle, the heating mantle heats the crucible, and the outer edge of the crucible is likely to form a part of the heat near the distance, and other parts are relatively hotter. The temperature of the hot part is relatively cold. In this environment, non-uniform crystal nuclei will appear, and the rotation of the crucible itself will cause the crystal liquid in the crucible to be difficult to maintain a flat solid-liquid interface, and crystal shock will appear during drawing. Phenomenon, which makes the crystal ingots obtained in the drawing have obvious unequal diameters, making the yield of the crystal ingots obtained is low; this is also an important factor in determining the quality of crystal finished products

[0003] Similarly, sapphire processing methods include pulling method, crucible descending method, temperature gradient method, guided mode method, heat exchange method, Kyropoulos method, etc. For the current method of sapphire preparation, the above preparation methods all use the rotation of the support to drive With the scheme of synchronous rotation of the crucible, the sapphire crystallization process in the crucible is subject to micro-shocks, which causes crystal shocks in the crystallization process and causes partial crystal dislocation, resulting in quality degradation

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