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Bottom electrode mechanism and plasma processing equipment with the same

An electrode mechanism, plasma technology, applied to circuits, discharge tubes, electrical components, etc., can solve the problems of easy tempering, parts ignition or discharge, inconsistent force on the grounding column, etc., to improve equipment stability and reduce damage Fire and discharge, the effect of improving uniformity

Active Publication Date: 2013-06-19
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) The price of high-temperature springs that can withstand temperatures above 400°C is generally higher, and it is easy to temper and lose elasticity at high temperatures
[0007] (2) The force of each grounding column is inconsistent, and some grounding columns are not in good contact with the carrier plate, resulting in ignition or discharge between the carrier plate and the parts in the reaction chamber during the process

Method used

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  • Bottom electrode mechanism and plasma processing equipment with the same
  • Bottom electrode mechanism and plasma processing equipment with the same
  • Bottom electrode mechanism and plasma processing equipment with the same

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Embodiment Construction

[0038] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0039]In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element refer...

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Abstract

The invention discloses a bottom electrode mechanism used for plasma processing equipment, and further discloses the plasma processing equipment with the bottom electrode mechanism. The bottom electrode mechanism used for the plasma processing equipment comprises a support plate, a bottom electrode base plate and at least one support unit, wherein support units are is placed between the support plate and the bottom electrode base plate, and the support plate and the bottom electrode base plate evenly contact through the support unit. The support unit comprises three grounding pillar support rods, a plurality of grounding pillars and two cylinder actuators. The cylinder actuators are placed below the grounding pillar rod on two sides, and piston rods of the cylinder actuators are connected to the grounding pillar rod on the two sides, wherein the grounding pillar rods on the two sides is placed outside and relative to the piston rods of the cylinder drivers. The bottom electrode mechanism is good in grounding performance and capable of reducing light striking and discharging, and improves equipment stability of the bottom electrode mechanism.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a lower electrode mechanism and plasma processing equipment with the lower electrode mechanism. Background technique [0002] The degree of automation in the existing solar cell production process is getting higher and higher. Among them, PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) is an important link in the thin film growth process for solar cell production. The chamber of PECVD equipment is fed with etching gas in a vacuum environment. After the etching gas is heated to a predetermined temperature, it is ionized by radio frequency to become plasma. These plasmas generate the desired film structures on the surface of the wafer. [0003] The uniformity of temperature inside the PECVD chamber, the uniformity of airflow, and the uniformity of the grounding of the lower electrode will all have an important impact o...

Claims

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Application Information

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IPC IPC(8): H01J37/04H01J37/32
Inventor 郑友山
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD