The embodiment of the utility model provides a
crystal growth furnace, and relates to the technical field of
silicon carbide crystal growth equipment. The
crystal growth furnace comprises a furnace body and a heating device, the heating device comprises a heater and a water-cooled
copper electrode which are connected, the heater is located in the
crystal growth furnace and used for heating the
crystal growth furnace, the water-cooled
copper electrode is partially located in the furnace body, the end, away from the heater, of the water-cooled
copper electrode extends out of the furnace body, and a cooling loop is arranged in the water-cooled
copper electrode. The cooling loop is provided with a water inlet and a water outlet which are located outside the furnace body, the water inlet is used for being connected with a
water cooling cable, and the water outlet is used for being connected with a water outlet
pipe. The external cooling water can cool the water-cooling
copper electrode through the water-cooling loop, so that the water-cooling
copper electrode is prevented from being melted, the situation that the connection position of the water-cooling copper electrode and the heater is loosened due to high temperature can be reduced, and the sparking phenomenon occurring at the connection position of the heater and the water-cooling copper electrode in the
crystal growth furnace is reduced.