40results about How to "Increase emission current" patented technology

The invention relates to a carbon nanometer tube field emitting cathode and a manufacturing method thereof. The carbon nanometer tube field emitting cathode comprises a conductive substrate, a grapheme layer and a carbon nanometer tube layer, wherein the grapheme layer and the carbon nanometer tube layer are sequentially stacked on the conductive substrate. The theory ratio surface area of grapheme reaches up to 2600m<2>/g, the unique two-dimensional structure of the carbon nanometer tube field emitting cathode can conduct effective electric heat transmission, more excellent thermotics and electrics performance is obtained compared with a carbon nanometer tube, the grapheme layer is arranged between the conductive substrate and the carbon nanometer tube layer, the characteristics of the large grapheme ratio surface area and excellent conductive heat dissipation are brought into full play, adhesive force of the carbon nanometer tube layer can be improved, and an emission current and stability are improved.

The invention relates to the technical field of vacuum electronic devices, and discloses a double-grid control type cold cathode electron gun and a preparation method thereof. In accordance with the present invention, A simple, a new type of electron gun with long service life and excellent performance is provided, the cold cathode is used as the emission source of the vacuum electronic device, Asurface of the cold cathode is arrayed by a cathode grid, which can effectively weaken the electrostatic shielding effect of electron emitted by large area cold cathode material, the emission currentof large area cold cathode material is increased, At the same time, the surface of the cathode substrate is designed as a whole plane so as to not only avoid machining burr and other problems, improveedge effect and spark phenomenon, but also make the electric field distribution on the surface of cathode substrate flat, which is conducive to improving the uniformity of emission current density and achieving the purpose of large current emission, so the electron gun can be used in vacuum electron radiation components or devices that generate large current and high density electron beam.

Disclosed is an intelligent polarized reflection type photoelectric sensor which relates to the sensor field. The intelligent polarized reflection type photoelectric sensor comprises a detection system and a control system. A side of a 0-degree polarizing film and a side of a 90-degree polarizing film are provided with a reflective plate. A compensation transmitting tube cooperates with a light guide device. A side of the light guide device is provided with a photosensitive diode. An HALIOS signal conditioning module, a transmission parameter adjustment module and an I\O module are disposed in an HALIOS system. A power stabilizing circuit is connected with the HALIOS system. The HALIOS system is connected with a sensor output circuit. The transmission parameter adjustment module is connected with a transmission and compensation transmission circuit. A pre-amplification circuit is connected with the HALIOS signal conditioning module. According to the invention, characteristics of the sensor such as resistance to hard light, intelligentization, adaptive compensation of dust pollution environment, measurement of highly transparent objects and the like can be achieved.

The invention provides a preparation method of a carbon nano tube cathode and the carbon nano tube cathode obtained through the method. The preparation method includes the steps that a bonding agent layer is arranged on an electric conduction substrate in an electrophoretic deposition mode; a carbon nano tube thin film is arranged on the electric conduction substrate in an electrophoretic deposition mode, wherein the bonding agent layer is also deposited on the electric conduction substrate; in a vacuum or protective atmosphere environment, hot pressed sintering is conducted on the carbon nano tube thin film and the bonding agent layer, so that the carbon nano tube cathode is obtained. According to the carbon nano tube cathode and the preparation method thereof, the hot pressed sintering technology is adopted, the root portion of a carbon nano tube is embedded into a base body of a bonding agent under the action of pressure, so that firm combination is formed, meanwhile, the contact resistance of the carbon nano tube and the base body is lowered, hence, emission currents of the carbon nano tube are increased, and the current stability of the carbon nano tube is improved.

In the present invention, a cathode for an x-ray tube is formed with a large area flat emitter. To reduce the aberrations to a minimum the emission area in the flat emitter has a non-rectangular shape and focusing pads arranged around the emitter. In an exemplary embodiment, the flat emitter has a non-rectilinear polygonal shape for an emission area on the emitter in order to increase the emission current from the emitter at standard voltage levels without the need to run the emitters at a higher temperature, add additional emitters to the cathode and/or to coat the emitters with a low work function material.

The present invention relates to a TV set and picture display device. Said TV set comprises: (A) a display panel that includes a plurality of electron emitting parts and a screen used for displaying pictures by electron radiation. Each said electron emitting device comprises: electrode pairs; electric membrane, including a crack and composed of electric materials but carbon and disposed between the said electrodes and connected to them; and a carbonic deposit with carbon as its main component. The said carbonic group deposit is disposed in the crack and connected to the electric membrane, and it has space formed wherein, which is narrow than the crack. (B) A TV signal receiving circuit used for receiving TV signals and (C) a drive circuit used for displaying pictures according to the TV signal onto the screen.

The invention belongs to the field of crossing of a vacuum electronics technology and a novel carbon material technology and particularly relates to a graphene-based field emission cold cathode and apreparation method. The field emission cold cathode comprises a substrate and an emitter, wherein the substrate is taken as a conductive substrate and is a silicon wafer or a metal sheet; the emitteris a graphene film layer; the graphene film layer is in close contact with the substrate; the thickness of the graphene film layer is 20-180 microns; and the graphene film layer is formed by grapheneclusters of which the particle sizes are 15-45 microns. The graphene-based cold cathode provided by the invention can be prepared by using the method, is in an array form, has good performance advantages of a low starting electric field, a low threshold electric field and high emission current, and can be applied to the fields, such as field emission display (FED) as an excellent electronic source.

A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

The invention relates to a process for producing an electron emission electrode (2) of an electron source, wherein the electron emission electrode has at least one emission tip (3) set up to release electrons into the environment, having the steps of a) provision of a parent body (1) made from a brittle material, b) mechanical and/or thermal surface working of the parent body to form the emissiontip, wherein brittle material is removed from the parent body at least around the emission tip. The invention also relates to an electron emission electrode of this kind and to a device having one ormore electron emission electrodes.

The invention discloses a light-emitting backlight source for a single-ring pyramid inclined plane cathode concave straight arc section gating structure. The light-emitting backlight source comprisesa vacuum sealing body and getter auxiliary elements located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode low-resistance membrane electric layer, an anode gray silver external connection layer and a thin light-emitting layer are arranged on the front hard glass plate, the anode low-resistance membrane electric layer is connected with the anode gray silver external connection layer, and the thin light-emitting layer is manufactured on the anode low-resistance membrane electric layer; and a single-ring pyramid inclined plane cathode concave straight arc section gating structure is arranged on the rear hard glass plate. The light-emitting backlight source hasthe advantages of being stable and reliable in manufacturing process and excellent in light-emitting brightness adjustability.

The invention relates to a silicon carbide junction barrier Schottky diode suitable for a high-temperature environment, and belongs to the technical field of semiconductor devices. According to the device, a novel P + region injection layout structure is adopted on the basis of a traditional JBS device structure, the area of a Schottky contact region and Schottky junction current are increased, meanwhile, the area of a depletion region is increased through a strip-shaped pattern of the P + injection region, the current decline and power loss increase of a silicon carbide junction barrier Schottky diode at high temperature are reduced, and the performance of the device is improved. And the reverse breakdown voltage is prevented from being reduced after the Schottky region of the diode is increased, and the problems that the forward working current of the JBS device declines seriously and the power loss is obviously increased in a large-current and high-temperature working environment are solved.

Nano carbon tubes in mode of lain low are distributed on pole plate of field-emissive cathode. The preparation includes following steps: putting Nano carbon tubes to alcohol or other solvent, and mixing it round to prepare solution; dropping the solution obtained to the said pole plate of cathode; air drying the said solution on the pole plate naturally. Advantages are: simplifying technique, lowering cost, raising performance, and avoiding difficulty of arranging Nano carbon tubes vertically.

The invention provides an X-ray tube based on thermal emission of a LaB6 nano material and a mobile CT (computer tomography) scanner. The X-ray tube based on thermal emission of the LaB6 nano material comprises a positive electrode, a negative electrode and a tube shell, wherein the tube shell is used for supporting the positive electrode and the negative electrode and enables a working environment of the positive electrode and the negative electrode to be insulated from the outside world, thereby keeping the working environment to be vacuum; the negative electrode is made of the LaB6 nano material, and electrons of thermal emission bombard the positive electrode when the negative electrode is heated to the working temperature of the LaB6 nano material so as to generate X-rays. According to the technical solution of the invention, under the condition of acquiring the same emission current density, the working temperature of the negative electrode made of the LaB6 nano material is lower than that of a negative electrode of a tungsten filament by more than 1000 DEG C through manufacturing the negative electrode by adopting the LaB6 nano material, thereby reducing the evaporation rate of the negative electrode material. In addition, the emission current, the stability and the service life of the adopted thermal emission negative electrode X-ray tube are improved greatly.

The invention discloses a method for electromagnetic ultrahigh-voltage DC remote power transmission and distribution of an ocean controllable source. A power generator provides electric energy for thewhole method and is then is connected with a deck power-end large-power rectification device and an inversion device to provide an intermediate-frequency alternating current with an adjustable voltage, the voltage is converted to a ultrahigh-voltage direct current by a deck power-end boost transformer and the deck power-end rectification device, the electric energy loss is reduced to the minimumby a long-distance ultrahigh-voltage DC power transmission and distribution ocean cable and then the electric energy is converted to an ultrahigh-voltage alternating current to be transmitted to a reactor and an underwater transformation device by an underwater power-end large-power inversion device, the electric energy is converted to a low-voltage alternating current by an underwater transformation device and then is supplied to an underwater emitter rectification inversion unit for use. By the method, the electric energy loss of traditional long-distance AC power transmission is greatly reduced, the power and the efficiency of long-distance electric energy transmission are improved, the electric energy demand of an ocean controllable source electromagnetic emitter at the bottom of sea is effectively guaranteed, and meanwhile, the problem of three-phase unbalance is thoroughly solved.

The invention discloses a light-emitting backlight source of a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source comprises avacuum sealing body and a getter accessory element located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode high-conductivity film layer, an anode silver thick line layer and a thin light-emitting layer are arranged on the front transparent hard glass plate, the anode high-conductivity film layer is connected with the anode silver thick line layer, and the thin light-emitting layer is manufactured on the anode high-conductivity film layer. The rear transparent hard glass plate is provided with a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source has the advantages of stable manufacturing process, simple manufacturing structure and high light-emitting brightness.

A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.