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Field emission cathode and its preparation method and application

A field emission cathode and conductive substrate technology, which is applied in the field emission field, can solve problems such as application limitations, poor emission stability, and small emission current, and achieve the effects of reducing production costs, stable performance, and reducing contact resistance

Active Publication Date: 2017-12-01
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a field emission cathode and its preparation method and application, to overcome the small emission current and poor emission stability of the existing two-dimensional material field emission cathode, making it Technical issues where the application is limited

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  • Field emission cathode and its preparation method and application

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preparation example Construction

[0032] On the other hand, on the basis of the field emission cathode of the embodiment of the present invention described above, the embodiment of the present invention also provides a preparation method of the field emission cathode of the embodiment of the present invention. The preparation method of the field emission cathode of the embodiment of the present invention is as follows figure 2 Therefore, see also figure 1 , its preparation method comprises the following steps:

[0033] S01. Forming a graphene layer 2 on the surface of the conductive substrate 1;

[0034] S02. Electrophoretic deposition of molybdenum disulfide and / or tungsten disulfide nanosheet layer 3 on the surface of graphene layer 2:

[0035] Molybdenum disulfide and / or tungsten disulfide nanosheets and charge additives are dispersed in an organic solvent to form an electrophoretic solution, the conductive substrate is used as a negative electrode, and under the action of an external electric field, the m...

Embodiment 1

[0059] The embodiment of the present invention provides a field emission cathode and a preparation method thereof. Among them, the field emission cathode structure such as figure 1 As shown, it includes a conductive substrate 1 / graphene layer 2 / molybdenum disulfide nanosheet layer 3 sequentially stacked and combined. Wherein, the conductive substrate 1 material is a copper sheet; the thickness of the graphene layer 2 is 5nm; The thickness is 3-5 μm.

[0060] Its preparation method is as follows:

[0061] S11. Provide conductive substrate: copper sheet

[0062] S12. chemical vapor deposition (CVD) method growth graphene layer:

[0063] Put the conductive substrate coated with the catalyst metal layer into the reaction furnace, pass in argon (Ar), heat the substrate to the reaction temperature of 900 ° C, keep it warm for a period of time, and then pass in methane and hydrogen (H 2 ) mixed gas to grow graphene nanosheets for 5min. After the reaction was over, it was cooled ...

Embodiment 2

[0068] The embodiment of the present invention provides a field emission cathode and a preparation method thereof. Among them, the field emission cathode structure such as figure 1 As shown, it includes a conductive substrate 1 / graphene layer 2 / molybdenum disulfide nanosheet layer 3 sequentially stacked and combined. Among them, the material of conductive substrate 1 is n-type doped silicon sheet; the thickness of graphene layer 2 is 10nm; The thickness of the molybdenum nanosheet layer 3 is 8-10 μm.

[0069] Its preparation method is as follows:

[0070] S21. Provide conductive substrate: n-type doped silicon wafer

[0071] S22. chemical vapor deposition (CVD) method growth graphene layer:

[0072] Put the conductive substrate coated with the catalyst metal layer into the reaction furnace, pass in argon (Ar), heat the substrate to the reaction temperature of 900 ° C, keep it warm for a period of time, and then pass in methane and hydrogen (H 2 ) mixed gas to grow graphen...

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Abstract

The invention discloses a field emission cathode and a preparation method and application thereof. The field emission cathode comprises a conductive substrate, a graphene layer and a molybdenum disulfide and / or tungsten disulfide nanosheet layer, wherein the graphene layer and the molybdenum disulfide and / or tungsten disulfide nanosheet layer are sequentially formed on the surface of the conductive substrate. The preparation method of the field emission cathode, disclosed by the invention comprises the step of forming the graphene layer on the surface of the conductive substrate and the step of carrying out electrophoresis on the surface of the conductive substrate to form the molybdenum disulfide and / or tungsten disulfide nanosheet layer. The field emission cathode disclosed by the invention has the advantages of low turn-on field, large emission current and high stability of emission current. By the preparation method of the field emission cathode, the performance stability of the field emission cathode is ensured, and the production cost of the field emission cathode is reduced.

Description

technical field [0001] The invention belongs to the technical field of field emission, and in particular relates to a field emission cathode and its preparation method and application. Background technique [0002] Electron emission sources are the core components of vacuum electronic devices such as microwave tubes, X-ray tubes, electronic propulsion and charge control devices, and have important applications in communication, space technology, safety detection, medical imaging and other fields. The principle of field electron emission is to suppress the emission surface potential barrier through an external strong electric field, so that the height of the potential barrier is reduced and the width is narrowed, so that free electrons inside the object enter the vacuum through the tunnel effect. The field emission cathode does not require external energy, can achieve instantaneous start, and can theoretically reach a high current density, which is a cathode with great develo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/304H01J9/025
Inventor 洪序达梁栋石伟
Owner SHENZHEN INST OF ADVANCED TECH
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