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A kind of preparation method of field emission flat panel display device of graphene oxide

A flat panel display and field emission technology, applied in the field of nanomaterials, can solve the problems of increasing the complexity of the driving circuit, poor electron emission uniformity, and low electron emission efficiency, and achieve high field enhancement factor, low open electric field, and reduced contact resistance. Effect

Active Publication Date: 2017-01-25
徐州鹏宇液压科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The electron emission source of the traditional field emission display has the following problems: (1) the nanowire gap between the cathode and the grid is fired by pulse voltage, and there is a certain chance in its position and width, and there is a gap between the electron emission source. There is a large deviation, which makes the electron emission uniformity poor
(2) Since the electron emission gap is only a few nanometers wide, many electrons are absorbed by the grid before being extracted by the anode electric field, making the electron emission efficiency low, and if the electron emission gap is increased, a higher voltage will be required. Increase the complexity of the drive circuit

Method used

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  • A kind of preparation method of field emission flat panel display device of graphene oxide
  • A kind of preparation method of field emission flat panel display device of graphene oxide
  • A kind of preparation method of field emission flat panel display device of graphene oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Step 1, coating a 5 micron thick bis-azide photoresist on the glass.

[0024] Step 2, covering the bis-azide photoresist with a mask plate with a distance of 0.5 micron between dots and an area of ​​each dot of 0.1 square micron. Baking the film at 200°C for 30 minutes; exposing for 20s, developing for 23s; dripping dimethyl sulfoxide on the emission point area, ultrasonication, removing part of the bis-azide photoresist, and exposing the area where the field emission point needs to be prepared.

[0025] Step 3, metal Ti is plated by magnetron sputtering. The specific sputtering conditions are: background vacuum degree 4×10 -4 Pa, argon working pressure 3×10 -1 Pa, sink sputtering power 200W, product rate 20nm / min, sputtering time 20min, Ti thickness 300nm.

[0026] Step 4, magnetic field-assisted precipitation of nickel nanoparticles on the metal film; 100 mg of nickel nanoparticles with an average diameter of 800 nm and 100 ml of ethylene glycol, ultrasonically dis...

Embodiment 2

[0036] In step one, a 5 micron thick phenolic resin photoresist is coated on the silicon.

[0037] Step 2: Cover the phenolic resin photoresist with a distance of 50 microns between dots and a mask plate with an area of ​​100 square microns, bake the film at 200°C for 30 minutes; expose for 20s, develop for 23s; Dimethyl sulfoxide is dripped on the dot area, and part of the photoresist is removed by ultrasonication, exposing the area where field emission dots need to be prepared.

[0038] Step 3, metal W is plated by magnetron sputtering. The specific sputtering conditions are: background vacuum degree 5×10 -4 Pa, argon working pressure 5×10-1 Pa, sink sputtering power 200W, product rate 20nm / min, sputtering time 13min, W thickness 250nm.

[0039] Step 4, magnetic field-assisted precipitation of nickel nanoparticles on the metal film; 100 mg of nickel nanoparticles with an average diameter of 800 nm and 100 ml of ethylene glycol, ultrasonically dispersed to prepare a suspens...

Embodiment 3

[0047] Step 1, coating 5 micron thick ion beam glue on the polytetrafluoroethylene.

[0048] Step 2: Cover the ion beam gel with a dot-to-dot spacing of 500 microns, each dot has an area of ​​10,000 square microns mask, bake the film at 200°C for 30 minutes; expose for 20s, develop for 23s; drop on the emission point area Apply dimethyl sulfoxide, ultrasonic, remove part of the photoresist, and expose the area where field emission points need to be prepared.

[0049] Step 3, metal Pd is plated by magnetron sputtering. The specific sputtering conditions are: background vacuum degree 5×10 -4 Pa, argon working pressure 5×10 -1 Pa, sink sputtering power 200W, product rate 20nm / min, sputtering time 13min, Pd thickness 250nm.

[0050] Step 4, magnetic field-assisted precipitation of nickel nanoparticles on the metal film; 200 mg of nickel nanoparticles with an average diameter of 800 nm and 100 ml of ethylene glycol, ultrasonically dispersed to prepare a suspension. Put the samp...

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Abstract

The invention discloses a preparation method of a graphene oxide field emission flat plate display instrument. The method comprises the following steps: coating a layer of photoresist on a plane substrate; patterning the photoresist, and exposing an area needing preparation of a field emission point on the substrate; plating a metal film; setting nickel nanometer particles on the metal film through magnetic field assistance; performing heat processing in a vacuum furnace; depositing a layer of graphene oxide on the surface of a sample; removing the residual photoresist to obtain a field emission lattice; performing wiring on the field emission lattice; placing an ITO glass sheet plated with fluorescent powder in parallel above the sample, and preparing a field emission flat plate module, wherein the sample and glass are spaced at a certain interval by use of an insulating material; and forming a peripheral circuit by use of a single-chip microcomputer and a shift register to realize screen display. The electron source of the flat plate display instrument prepared by use of the method is a novel field emitter structure, and the flat plate display instrument has the advantages of stable emission currents, small driving voltage, high electron emission efficiency and the like.

Description

technical field [0001] The invention relates to a method in the technical field of nanomaterials, in particular to a method for preparing a graphene oxide field emission flat panel display. Background technique [0002] Field emission technology is a kind of cold cathode emission technology, which has the characteristics of high current density, low power consumption, and fast response. It has important application prospects in the field of vacuum electronics such as flat panel displays, X-ray sources, and microwave amplifiers. Thin-film field emission cold cathodes have incomparable advantages over ordinary cathodes: low operating voltage, no warm-up delay, and high integration, and can be widely used in high-performance display devices such as high-quality flat-panel TVs and portable computer monitors. In the field emission research of thin films, one of the key issues is to develop effective and reliable solid emission surfaces. Although a lot of progress has been made i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J29/04H01J31/12H01J1/304
Inventor 赵波王楠姜国华
Owner 徐州鹏宇液压科技有限公司
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