Grid plasma immersion ion deposition dlc method with bias regulation

A technology of ion deposition and plasma, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor bonding force, uneven deposition of DLC film, difficult control of film performance, etc. Improved binding force, stable glow discharge, and ease of industrial production

Active Publication Date: 2017-10-03
HARBIN INST OF TECH
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  • Application Information

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Problems solved by technology

[0007] The present invention aims to solve the problems of poor binding force, difficult regulation of film properties and non-uniformity of DLC film deposited on large or complex parts in the existing MPIID method for depositing DLC ​​films, and provides a DLC method for bias control grid plasma immersion ion deposition

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  • Grid plasma immersion ion deposition dlc method with bias regulation
  • Grid plasma immersion ion deposition dlc method with bias regulation
  • Grid plasma immersion ion deposition dlc method with bias regulation

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specific Embodiment approach 1

[0029] Specific implementation mode 1: In this implementation mode, the bias control grid plasma immersion ion deposition DLC method is carried out according to the following steps:

[0030] 1. Place the grid 4 in the vacuum chamber 5, and then place the workpiece on the sample holder 6 in the grid 4. The grid 4 is insulated from the workpiece, and the grid 4 passes the high-voltage pulse of the wire and the grid high-voltage pulse power supply 1. The output end is connected, and a grid high-voltage pulse waveform oscilloscope 7 is arranged between the grid 4 and the grid high-voltage pulse power supply 1; the workpiece is connected to the pulse output end of the workpiece high-voltage pulse power supply 3 through a wire, and the workpiece and the workpiece high-voltage pulse A workpiece high-voltage pulse waveform oscilloscope 8 is arranged between the power sources 3; the phase between the workpiece high-voltage pulse and the grid high-voltage pulse is controlled by the pulse...

specific Embodiment approach 2

[0039] Embodiment 2: This embodiment differs from Embodiment 1 in that: in step 2, the pulse voltage of the grid high-voltage pulse outputted by the grid high-voltage pulse power supply 1 is adjusted to 2kV, the frequency is 2000Hz, and the pulse width is 20μs. Others are the same as the first embodiment.

specific Embodiment approach 3

[0040] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 2, the pulse voltage of the workpiece high-voltage pulse output by the workpiece high-voltage pulse power supply 3 is adjusted to 3kV, the frequency is 2000Hz, and the pulse width is 20μs. Others are the same as those in Embodiment 1 or 2.

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Abstract

Bias regulation grid plasma immersion ion deposition DLC method. It involves plasma immersion ion deposition DLC method. The invention aims to solve the problems of poor binding force, difficult adjustment and control of film performance and non-uniformity of DLC film deposited on large or complex parts existing in the existing MPIID method for depositing DLC ​​films. Method: 1. Put the grid and the workpiece in the vacuum chamber, put the workpiece on the sample rack in the grid, insulate the grid from the workpiece, connect the grid to the high-voltage pulse power supply of the grid, and connect the workpiece to the high-voltage pulse power supply of the workpiece; 2. Splash the workpiece 3. Plasma nitriding treatment; 4. Sputtering etching treatment; 5. Preparation of SiC transition layer; 6. Preparation of bias control thin film. The invention is used for preparing DLC ​​film deposited by plasma immersion ion deposition of bias voltage control grid.

Description

technical field [0001] The invention relates to a plasma immersion ion deposition DLC method. Background technique [0002] DLC (Diamond Like Carbon) film has many excellent properties, such as low friction coefficient, high hardness and wear resistance, chemical inertness, optical transparency in the infrared spectrum range, low electrical conductivity and biocompatibility, these characteristics make DLC film has Wide application prospects. [0003] DLC films can be prepared by physical vapor deposition (PVD) methods (such as sputtering or arc evaporation) and plasma enhanced chemical vapor deposition (PECVD-Plasma Enhanced Chemical Vapor Deposition) methods. PECVD technology is to connect a negative bias power supply to the workpiece, and use the glow discharge of hydrocarbon gas (such as acetylene or methane) to deposit DLC film. The laboratory generally uses radio frequency (rf-13.56MHz) power supply. The preparation of DLC by rf-PECVD is not easy for large-scale indus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/02C23C16/44
Inventor 田修波吴明忠巩春志
Owner HARBIN INST OF TECH
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