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Formation method of fin field effect transistor

A fin field effect tube and fin technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the stability of fin field effect tubes, and achieve flat and stable fin surfaces Good results

Active Publication Date: 2015-10-14
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there are problems with the stability of the FinFET formed by the prior art

Method used

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  • Formation method of fin field effect transistor
  • Formation method of fin field effect transistor
  • Formation method of fin field effect transistor

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Embodiment Construction

[0027] As mentioned in the background, there are problems with the stability of the fin field effect transistor formed in the prior art.

[0028] After research, the inventor found that since the fins of the prior art fin field effect transistors are usually formed by an etching process, there are some depressions and protrusions on the surface where the fins are formed, and the surface roughness of the fins is as high as Even above, when forming the dielectric layer or the gate structure, etc., there is a problem in the quality of the junction between the fin and the dielectric layer or the gate structure, resulting in poor stability of the subsequently formed FinFET. Moreover, the corners of the fins are almost at right angles, and the stress is relatively concentrated, which easily affects the mechanical strength of the fins and also affects the stability of the FinFET.

[0029] After further research, the inventor found that when the surface of the fin has depressions and...

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Abstract

A method for forming fin type field-effect transistors comprises providing a substrate, wherein a fin portion is formed on the surface of the substrate; processing the surface of the fin portion through an oxidation etching technology; and performing wet etching on the fin portion surface processed through the oxidation etching technology. According to the method, the fin surface of a formed fin type field-effect transistor is flat, the surface roughness is low, corners are smooth, and the stability of the fin type field-effect transistor is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology and the gradual reduction of process nodes, gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the multi-gate device has been obtained as a substitute for the conventional device. Widespread concern. [0003] Fin Field Effect Transistor (Fin FET) is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fin field effect transistor in the prior art is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 邓浩张彬
Owner SEMICON MFG INT (SHANGHAI) CORP