Infrared light and visible light conversion device
A technology of visible light and infrared light, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., to achieve the effect of improving conversion efficiency, compact structure and light weight
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Embodiment 1
[0028] Embodiment 1: A device for converting infrared light to visible light, which is composed of a substrate 1 , an anode layer 2 , an infrared absorbing material layer 3 , an OLED organic material layer 4 and a cathode layer 5 . in:
[0029] Substrate 1 is glass with better light transmission;
[0030] The anode layer 2 is on the substrate, and the material is indium tin oxide (ITO);
[0031] The infrared absorbing material layer 3 is on the anode layer 2, and the material is MoO 3 CTC formed by doping with CBP at a mass ratio of 3:1, the CTC material has obvious absorption near the wavelength of 840nm;
[0032] OLED organic material layer 4 includes hole injection layer (HIL), hole transport layer (HTL), light emitting layer (EL), electron transport layer (ETL) and electron injection layer (EIL); where:
[0033] The hole injection layer (HIL) uses MoO 3 Material;
[0034] The hole transport layer (HTL) is made of NBP material;
[0035] The light-emitting layer (EL) m...
Embodiment 2
[0040] Embodiment 2: A device for converting infrared light to visible light, which is composed of a substrate 1 , an anode layer 2 , an infrared absorbing material layer 3 , an OLED organic material layer 4 and a cathode layer 5 . in:
[0041] Substrate 1 is glass with better light transmission;
[0042] The anode layer 2 is on the substrate, and the material is indium tin oxide (ITO);
[0043] The infrared absorbing material layer 3 is on the anode layer 2, and the material is a CTC formed by doping HAT-CN and NBP in a mass ratio of 3:7. The CTC material has obvious absorption near a wavelength of 1400nm;
[0044] OLED organic material layer 4 includes hole injection layer (HIL), hole transport layer (HTL), light emitting layer (EL), electron transport layer (ETL) and electron injection layer (EIL); where:
[0045] The hole injection layer (HIL) is made of CuPc material;
[0046] The hole transport layer (HTL) is made of CBP material;
[0047] The luminescent layer (EL) ...
Embodiment 3
[0052] Embodiment 3: A device for converting infrared light to visible light, which is composed of a substrate 1 , an anode layer 2 , an infrared absorbing material layer 3 , an OLED organic material layer 4 and a cathode layer 5 . in:
[0053] Substrate 1 is glass with better light transmission;
[0054] The anode layer 2 is on the substrate, and the material is indium tin oxide (ITO);
[0055] The infrared absorbing material layer 3 is on the anode layer 2, and the material is MoO 3 CTC formed by doping with TCTA at a mass ratio of 3:1, the CTC material has obvious absorption near the wavelength of 1450nm;
[0056] OLED organic material layer 4 includes hole injection layer (HIL), hole transport layer (HTL), light emitting layer (EL), electron transport layer (ETL) and electron injection layer (EIL); where:
[0057] The hole injection layer (HIL) uses MoO 3 Material;
[0058] The hole transport layer (HTL) is made of CBP material;
[0059] The light-emitting layer (EL)...
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