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Metal line structure and forming method of

A technology of metal connection and metal layer, applied in the field of metal connection structure with air gap and its formation, can solve the problems of large influence of electrical isolation, enlarged size of protruding structure, unfavorable large-sized air gap, etc. Achieve the effect of simple process and good controllability

Active Publication Date: 2013-07-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, as the width of the air gap increases, the size of the protruding structure will also become larger, which will have a greater impact on electrical isolation, which is not conducive to the formation of large-sized air gaps.

Method used

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Embodiment Construction

[0031] It can be seen from the background art that when other structures are deposited on the metal wiring structure with air gaps, a part of the deposition gas will enter into the air gaps to form a protruding structure (Jaw), which affects the isolation effect. Moreover, as the width of the air gap increases, the size of the protruding structure will also increase, which will have a greater impact on electrical isolation, which is not conducive to forming a large-sized air gap.

[0032] In the embodiment of the present invention, protrusions are formed on the opening sidewalls of the grooves forming the air gaps to block the deposition gas from entering the air gaps, thereby reducing the size of the protruding structure (Jaw) and improving electrical isolation. Effect.

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, the embodiments of the present invention will be described in detail below in conjunction with...

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Abstract

The invention provides a forming method of a metal line structure and the metal line structure. The forming method of the metal line structure comprises the following steps: providing a semiconductor substrate; and forming metal lines on the semiconductor substrate, forming grooves among the metal lines, and forming protrusions in opening positions of the grooves. The protrusions are formed on the lateral walls in the opening positions of the grooves, and an opening size of air gap between adjacent metal lines is reduced. When other structures are formed through sedimentation, sedimentation gas entering the air gap is decreased, and therefore the sizes of protruding structures are reduced, and the effect of electrical isolation is improved.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a metal wiring structure with an air gap (Air Gap) and a forming method thereof. Background technique [0002] One of the challenges encountered in the field of integrated circuit design and manufacturing today is how to reduce the signal transmission RC delay (Resistance Capacitance Delay). In this regard, a commonly used method is to reduce the parasitic capacitance (Parasitic Capacitance) between metal connections. This is usually achieved by using a dielectric layer with a low dielectric constant. [0003] Since air has a low dielectric constant of 1.0 (relative dielectric constant value), forming an air gap (Air Gap) between the metal connections can further reduce the dielectric constant between the metal connections. The methods for forming metal wiring structures with air gaps in the prior art include: [0004] Please refer to figure 1 , providing a semiconduct...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/528H01L21/768
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP