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Preparation method of self-assembled three-dimensional hafnium carbide whisker network structure
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A three-dimensional hafnium carbide, network structure technology, applied in chemical instruments and methods, from chemical reactive gases, crystal growth and other directions, to achieve the effect of less impurity content
Active Publication Date: 2015-05-13
NORTHWESTERN POLYTECHNICAL UNIV
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However, the preparation of self-assembled three-dimensional structures of one-dimensional metal carbide materials by catalytic chemical vapor deposition has not been reported at home and abroad.
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Embodiment 1
[0026] 1. Configure Ni(NO) with a concentration of 1mol / L 3 ) 2 weak.
[0027] 2. Soak the cleaned 2D carbon felt with a size of 60mm×45mm×10mm in the solution described in step 1 for 2 hours, then take out the carbon felt and dry it in a drying oven at 50°C for later use.
[0028] 3. Chemical vapor deposition (CVD) process to prepare self-assembled three-dimensional HfC whisker network structure, the method is as follows:
[0029] impregnated with Ni(NO 3 ) 2 The 2D needle-punched carbon felt is placed in a graphite mold for deposition in a vertical tubular resistance furnace, vacuumed to about 2kPa, and inert argon is introduced as a protective gas, and the temperature of the furnace is raised at a heating rate of 5°C / min. to 1250°C; when the temperature in the furnace reaches the deposition temperature, H 2 , HfCl 4 and CH 4 gas, control H 2 , HfCl 4 and CH 4 The partial pressures are 0.90, 0.05, 0.05, HfCl 4 The gas flow rate is 115mg / min; the vacuum pumping spe...
Embodiment 2
[0031] 1. Configure NiCl with a concentration of 0.5mol / L 2 weak.
[0032] 2. Soak the cleaned 2D carbon felt with a size of 60mm×45mm×10mm in the solution described in step 1 for 2 hours, then take out the carbon felt and dry it in a drying oven at 50°C for later use.
[0033] 3. Chemical vapor deposition (CVD) process to prepare self-assembled three-dimensional HfC whisker network structure, the method is as follows:
[0034] will be impregnated with NiCl in step 2 2 The 2D needle-punched carbon felt is placed in a graphite mold for deposition in a vertical tubular resistance furnace, vacuumed to about 2kPa, and inert argon is introduced as a protective gas, and the temperature of the furnace is raised at a heating rate of 5°C / min. to 1300°C; when the temperature in the furnace reaches the deposition temperature, H 2 , HfCl 4 and CH 4 gas, control H 2 , HfCl 4 and CH 4 The partial pressures are 0.80, 0.10, 0.10, HfCl 4 The gas flow rate is 150mg / min; the vacuum pump...
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Abstract
The invention relates to a preparation method of a self-assembled three-dimensional hafnium carbide whisker network structure. In the method, a template for the three-dimensional network structure is not used, the self-assembled three-dimensional HfC whisker network structure is prepared on the surface of a 2-dimensional needle punched carbon felt for the first time directly by a catalyst aided chemical vapor deposition method, and the prepared product is lower in impurity content in comparison with other elements introduced by a template method.
Description
technical field [0001] The invention relates to a method for preparing a self-assembled three-dimensional hafnium carbide whisker network structure, in particular to a method for preparing a self-assembled three-dimensional hafnium carbide (HfC) whisker network structure. Background technique [0002] HfC has an ultra-high melting point (3890°C), and is one of the most refractory ultra-high temperature ceramics; at the same time, it also has high hardness (Vickers hardness: 26.1GPa), high elastic modulus (350–510GPa) and good chemical stability. Due to this series of excellent properties, it has been used as a wear-resistant film and a thermal protective coating in the aerospace field; in addition, HfC whiskers or nanowires can also be used as reinforcements for ultra-high temperature composites, and because of its Stable and special physical and chemical properties can also be used as field emission materials for point electron sources. Therefore, the three-dimensional Hf...
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