Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optical multilayered film bandpass filter

A band-pass filter, optical multilayer film technology, applied in optics, optical components, instruments, etc., to reduce polarization dependence and eliminate ghosting effects

Active Publication Date: 2013-07-17
OLYMPUS CORP
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the transmission characteristic of p-polarized light becomes a wider form compared with the transmission characteristic of s-polarized light, and there may be practical problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical multilayered film bandpass filter
  • Optical multilayered film bandpass filter
  • Optical multilayered film bandpass filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1)

[0099] figure 1 It is a graph showing the bandpass characteristic of the optical multilayer film bandpass filter of Example 1. figure 2 It is a sectional view showing the structure of the optical multilayer film bandpass filter of Example 1. image 3 It is a graph showing the film thickness and constituent substances of each layer of the optical multilayer film bandpass filter of Example 1. exist figure 1 Among them, the solid line A represents the p-polarized light transmission characteristic (Tp), the dotted line B represents the s-polarized light transmission characteristic (Ts), and the dotted line C represents the average (Tmean) of the p-polarized light transmission characteristic and the s-polarized light transmission characteristic. and, in image 3 , shows the optical film thickness (λ / 4=1) when the incident angle is 45 degrees and the wavelength λ of the target light is 498 nm.

[0100] Such as figure 2 , image 3 As shown, the optical multilayer film bandp...

Embodiment 2~ Embodiment 5)

[0111] Figure 7 , Figure 11 , Figure 15 and Figure 19 It is a graph showing the bandpass characteristics of the optical multilayer film bandpass filters of Example 2, Example 3, Example 4, and Example 5, respectively.

[0112] Figure 8 , Figure 12 , Figure 16 and Figure 20 It is a graph showing the bandpass characteristics of the SWPF part, the LWPF part, and the polarization-dependent improvement part in Example 2, Example 3, Example 4, and Example 5, respectively.

[0113] Figure 9 , Figure 13 , Figure 17 and Figure 21 It is a sectional view showing the structure of the optical multilayer film bandpass filter of Example 2, Example 3, Example 4, and Example 5, respectively.

[0114] Figure 10 , Figure 14 , Figure 18 and Figure 22 It is a graph showing the film thickness and constituent substances of each layer of the optical multilayer film bandpass filters of Example 2, Example 3, Example 4, and Example 5, respectively.

[0115] exist Figure...

Embodiment 2

[0129] (1) Example 2: high refractive index layer > low refractive index layer ( Figure 7 )

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention solves problems such as ghosts produced by dihedral reflection, with little dependence on polarized waves with respect to inclined incidence. An optical multilayered film bandpass filter is provided with: a transparent substrate facing target light; an LWPF unit which is formed on only one side of the substrate, and forms a rising section on the short wavelength side in the bandpass characteristics and a reflection band; an SWPF unit which forms a falling section on the long wavelength side in the bandpass characteristics and the reflection band; and a polarized-wave dependency improvement unit for controlling the separation of P waves and S waves produced by the inclined incidence of the target light in the rising section and the falling section respectively formed by the LWPF unit and the SWPF unit. The LWPF unit, the SWPF unit, and the polarized-wave dependency improvement unit are provided with a structure comprising a plurality of alternately laminated layers of high refractive index layers formed by a first dielectric body, and low refractive index layers formed by a second dielectric body having a lower refractive index than the first dielectric body.

Description

technical field [0001] The invention relates to an optical multilayer film bandpass filter. Background technique [0002] As for optical multilayer bandpass filters having a structure in which dielectric thin films with high and low refractive indices are laminated alternately on a glass substrate or the like, as general optical characteristics, there are "transmission bands" in which light of a certain wavelength range is transmitted, The "reflection band (or blocking domain)" that blocks light of a certain wavelength range before and after it, and the slope where the transmittance rises or falls at the boundary between the transmission band and the reflection band. In the following description, at the boundary between the transmission band and the reflection band, the slope where the transmittance rises on the short wavelength side is referred to as a "rising portion", and the slope where the transmittance decreases on the long wavelength side is called a "falling portion"...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/28G02B5/26
CPCG02B5/285G02B27/286
Inventor 小川晃一
Owner OLYMPUS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products