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A kind of loading platform for plasma processing device

A plasma and processing device technology, which is applied in the field of the loading table of the plasma processing device, can solve the problems of poor uniformity and lower yield, and achieve the effect of improving the uniformity of the process and improving the edge effect

Active Publication Date: 2015-09-30
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poor uniformity of each process link in the edge part will lead to a significant drop in yield

Method used

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  • A kind of loading platform for plasma processing device
  • A kind of loading platform for plasma processing device
  • A kind of loading platform for plasma processing device

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Embodiment Construction

[0032] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0033] The present invention divides the dielectric between the lower electrode and the glass substrate of the vacuum processing device into a plurality of regions that can be stretched and moved in the vertical direction, so as to generate one or more cavities at different positions corresponding to the glass substrate , to change the dielectric constant of the equivalent capacitance between the lower electrode and the lower surface of the glass substrate, thereby further changing the size of the equivalent capacitance, so as to optimize the process uniformity of the glass substrate.

[0034] A base structure commonly used in semiconductor manufacturing includes a structure (semiconductor on insulation, SOI) with a semiconductor material on an insulator substrate, which is often used to manufacture high-performance thin-film transistors, Displays s...

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Abstract

The invention provides a slide holder applied to a plasma processing device, which is used for bearing a glass substrate, wherein the slide holder comprises a first electrode, a static sucking disc and a driving device; the first electrode is connected with a radio-frequency power supply with first frequency and is used for producing plasmas; the static sucking disc is positioned above the first electrode, and the static sucking disc comprises a first dielectric layer and a dielectric layer, an electrode used for generating electrostatic attraction is embedded in the first dielectric layer; the dielectric layer is positioned under the first dielectric layer, and at least comprises a first area, a third area and a second area, the first area corresponds to the central region of the glass substrate, the third area corresponds to the marginal area of the glass substrate, and the second area is positioned between the first area and the third area; and in addition, the driving device is used for selectively driving one of the first area, the second area and the third area to stretch out and draw back in the vertical direction. The invention further provides the plasma processing device comprising the slide holder. According to the invention, edge effect can be improved, and manufacture procedure uniformity can be achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a loading platform for a plasma processing device. Background technique [0002] The edge effect of semiconductor process parts is a problem that plagues the semiconductor industry. The so-called edge effect of semiconductor process parts means that in the process of plasma processing, because the plasma is controlled by the electric field, and the field strength at the edge of the upper and lower poles will be affected by the edge conditions, there will always be a part of the electric field line bent, resulting in the edge of the electric field The field strength is uneven, which in turn causes the plasma concentration in this part to be uneven. In this case, there is also a circle of uneven processing around the produced semiconductor process piece. This inhomogeneity is more obvious when the frequency of the radio frequency electric field is higher. When the radio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/20H01L21/683
Inventor 陶铮凯文·佩尔斯松尾裕史曹雪操
Owner ADVANCED MICRO FAB EQUIP INC CHINA